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Investigation of the growth processes and defect formation in epitaxial layers and bulk crystals of silicon carbide.

机译：研究碳化硅的外延层和块状晶体的生长过程和缺陷形成。

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摘要

The main objectives of this research work are: (1) SiC PVT (Physical Vapor Transport) epitaxial film growth and investigation of defect formation in silicon carbide bulk growth at the initial stage of crystallization; (2) SiC material characterization and defect observation in SiC bulk crystals; (3) SiC material processing for device fabrication.; The initial stage of crystallization on the seed, during PVT bulk SiC growth, was identified as a most important part of the sublimation growth process.; SiC PVT homoepitaxial film growth was successfully realized. The phenomena of micropipe termination was discovered and investigated. A model of the mechanism of micropipe formation and possible annihilation was developed and experimentally confirmed in this research; For the first time it is shown that by using a deposited graphite mask, it is possible to locally grow epitaxial layers on silicon carbide by PVT epitaxy. The locally grown islands show excellent crystalline structures with an absence of defect etch pits.; In this dissertation work an attempt is made to develop a model that enables determination of the influence of the instability of the growth conditions within growth cell on the SiC crystal growth parameters. The model of crystal growth, which takes into account, the surface processes such as vapor condensation, desorption, surface diffusion, atomic collisions, and probability of chemical reactions was successfully developed and the SiC crystal growth rate was estimated based on this model; Various techniques were developed to characterize defects in SiC bulk crystals. A new phenomena based on electrostatic charge generation in the vicinity of crystal imperfections, under electron beam bombardment, was discovered. A new design for a cathodoluminescence detector was proposed by us and successfully tested for SiC defect investigation.; A novel anodic oxidation technique to produce high quality SiO2 films is presented. This technique shows great potential to form thick >1000 Å SiO2 films on silicon carbide surfaces in a very short period of time (less than 5 minutes).; During the experimentation with anodic oxidation of SiC crystals under different conditions, the phenomena of selective electrochemical etching was discovered.
机译：这项研究工作的主要目的是：（1）SiC PVT（物理气相传输）外延膜的生长以及在结晶初期对碳化硅整体生长中缺陷形成的研究; （2）SiC块状晶体中的SiC材料表征和缺陷观察; （3）用于器件制造的SiC材料加工;在PVT块状SiC的生长过程中，晶种结晶的初始阶段被确定为升华生长过程中最重要的部分。成功实现了SiC PVT同质外延膜的生长。发现并研究了微管终止现象。建立了微管形成和可能的ation灭机制的模型，并在实验中进行了实验证实；首次表明，通过使用沉积的石墨掩模，可以通过PVT外延在碳化硅上局部生长外延层。局部生长的岛显示出优良的晶体结构，没有缺陷蚀刻坑。在本文中，尝试开发一种模型，该模型能够确定生长单元内生长条件的不稳定性对SiC晶体生长参数的影响。成功地建立了晶体生长模型，该模型考虑了诸如蒸汽凝结，解吸，表面扩散，原子碰撞和化学反应可能性等表面过程，并基于该模型估算了SiC晶体的生长速率；开发了各种技术来表征SiC块状晶体中的缺陷。在电子束轰击下，发现了一种基于晶体缺陷附近静电荷产生的新现象。我们提出了一种用于阴极发光检测器的新设计，并成功地进行了SiC缺陷研究的测试。提出了一种生产高质量SiO 2 薄膜的新型阳极氧化技术。该技术显示出在很短的时间内（不到5分钟）在碳化硅表面上形成> 1000 SiO 2 厚膜的巨大潜力。在不同条件下对SiC晶体进行阳极氧化实验中，发现了选择性电化学刻蚀现象。

著录项

  • 作者

    Khlebnikov, Yuri Igorevich.;

  • 作者单位

    University of South Carolina.;

  • 授予单位 University of South Carolina.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2002
  • 页码 156 p.
  • 总页数 156
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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