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Erbium doped stain etched porous silicon

机译：掺do污渍蚀刻多孔硅

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In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO_3 solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er~(3+) ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy.
机译：在这项工作中，提出了一种简单的掺杂工艺，该工艺应用于污点蚀刻后的多孔硅层（PSL）。已经开发出该掺杂工艺用于多孔硅太阳能电池，在该多孔硅太阳能电池中，常规的do掺杂工艺由于高的加工成本和技术难度而不能承受。通过浸入HF / HNO_3溶液中形成PSL，以适当地调节孔隙率和孔厚度，以最佳掺杂多孔结构。形成多孔结构后，通过氮BET（Brunauer，Emmett和Teller）面积测量和扫描电子显微镜对PSL进行分析。随后，将PSL浸入饱和硝酸nitrate溶液中以覆盖多孔表面。然后，对样品进行热处理以活化Er〜（3+）离子。在此过程中使用了不同的温度和退火时间。在掺杂工艺之前和之后评估PSL的光致发光，并通过傅里叶变换红外光谱分析组成。

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