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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Single-electron transistor properties of Fe-SrF_2 granular films
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Single-electron transistor properties of Fe-SrF_2 granular films

机译：Fe-SrF_2颗粒膜的单电子晶体管性能

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摘要

We prepared single-electron tunnelling (SET) transistors made of Fe nanodots and investigated their fundamental properties. The device films were composed of Fe nanodot arrays embedded in a SrF_2 matrix fabricated by the co-evaporation method on thermally oxidized Si substrates. The Si substrates were used as backgate electrodes. The current-to-voltage curves between source and drain electrodes were nonlinear even at room temperature. Coulomb blockade was clearly observed at 8 K. Current oscillation which is another SET characteristic was confirmed in the curves of drain current versus gate voltage. The oscillation period was roughly estimated to be about 20-40 V.
机译：我们准备了由Fe纳米点制成的单电子隧穿（SET）晶体管，并研究了其基本性能。器件膜由嵌入在SrF_2基质中的Fe纳米点阵列组成，该基质通过共蒸发法在热氧化的Si衬底上制备。 Si衬底用作背栅电极。即使在室温下，源电极和漏电极之间的电流-电压曲线也是非线性的。在8 K时清楚地观察到库仑阻塞。在漏极电流与栅极电压的关系曲线中证实了另一种SET特性的电流振荡。粗略估计振荡周期约为20-40V。

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