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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >The effect of the individual species of the N plasma on the characteristics of InAsN quantum dots grown by MBE
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The effect of the individual species of the N plasma on the characteristics of InAsN quantum dots grown by MBE

机译：N等离子体的各个物种对MBE生长的InAsN量子点特性的影响

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摘要

The influence ot the different species which constitute N plasma, such as atomic nitrogen, diatomic nitrogen and ionized species, on the morphological and optical characteristics of the InAsN quantum dots (QDs) has been studied in this work. We have performed several sets of growths modifying in each one the concentration of these species. Atomic force microscopy (AFM) and photoluminescence (PL) techniques have been used to perform the surface characterization and the optical analysis of these samples, respectively. Clearly, we have found a strong correlation between the structural and optical characteristics of the InAsN QDs with the plasma composition used during the growth. Ionized species favour the high density of QDs, atomic nitrogen increase dimensions of the QDs and molecular nitrogen does not almost affect the characteristics of these nanostructures. An increment of ionized species in the plasma yields a higher density of QDs, an increase in the atomic nitrogen increases the dimensions of the QDs and the molecular nitrogen flux used does not almost affect the characteristics of these nanostructures. Also, we have found that there is not redshift of the peak wavelength of the PL emission as we increase the atomic nitrogen concentration during the growth. This may be due to equal nitrogen incorporation into the quantum dots. We supposed that the mechanism dominating in it is possible that the nitrogen incorporation in these types of nanostructures depend on another growth parameter.
机译：在这项工作中，研究了构成N等离子体的不同物种（例如原子氮，双原子氮和离子化物种）对InAsN量子点（QD）的形态和光学特性的影响。我们已经进行了几组生长，每组生长中都改变了这些物种的浓度。原子力显微镜（AFM）和光致发光（PL）技术已分别用于对这些样品进行表面表征和光学分析。显然，我们发现InAsN QD的结构和光学特性与生长过程中使用的血浆成分之间有很强的相关性。电离物质有利于量子点的高密度，原子氮增加量子点的尺寸，分子氮几乎不会影响这些纳米结构的特性。等离子体中离子化物种的增加会产生更高的量子点密度，原子氮的增加会增加量子点的尺寸，并且所使用的分子氮通量几乎不会影响这些纳米结构的特性。此外，我们发现，随着我们在生长过程中增加原子氮浓度，PL发射的峰值波长不会发生红移。这可能是由于相等的氮结合到量子点中。我们认为该机理占主导地位，这可能是因为这些类型的纳米结构中的氮掺入取决于另一个生长参数。

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