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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Structures and photoluminescence properties of silicon thin films prepared by pulsed ion-beam evaporation
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Structures and photoluminescence properties of silicon thin films prepared by pulsed ion-beam evaporation

机译：脉冲离子束蒸发制备硅薄膜的结构和光致发光性能

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摘要

Synthesis of photoluminescent (PL) Si thin films is explored using an intense pulsed ion-beam evaporation (IBE) technique. The deposition of Si was performed at a vacuum condition of ～10~(-2) Pa in a simple scheme. Well-crystallized Si thin films have been obtained as revealed by high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Visible light emission in blue-green range was observed from the samples under excitation of a 325 nm He-Cd laser (3.8 eV) at room temperature. The thin films were composed of relatively large crystals with an average size around 20 nm, above the range predicted using a quantum confinement model proposed for Si nanocrystals. The PL was subsequently studied with a hydrofluoric acid (HF) erosion test, intended to diminish the effect of Si oxides on the samples, where no PL shift was found except for deterioration in PL intensity after the post-treatment of samples. Furthermore, the experimental PL spectra can be consistently deconvolved into four subbands with centers at 2.88, 2.75, 2.55, and 2.36 eV. All the PL subbands are ascribed to Si oxide-defect bands irrelevant to the quantum confinement model.
机译：使用强脉冲离子束蒸发（IBE）技术探索了光致发光（PL）Si薄膜的合成。以简单的方案在〜10〜（-2）Pa的真空条件下进行Si的沉积。如高分辨率透射电子显微镜（HRTEM）和X射线衍射（XRD）所揭示，已获得结晶良好的Si薄膜。在室温下，在325 nm He-Cd激光（3.8 eV）激发下，从样品中观察到蓝绿色范围内的可见光发射。薄膜由相对较大的晶体组成，平均尺寸约为20 nm，高于使用针对Si纳米晶体提出的量子限制模型预测的范围。随后用氢氟酸（HF）腐蚀试验研究了PL，目的是减少氧化硅对样品的影响，除了样品后处理后PL强度降低外，没有发现PL偏移。此外，可以将实验PL光谱一致地解卷积为四个子带，其中心分别为2.88、2.75、2.55和2.36 eV。所有PL子带都归因于与量子限制模型无关的Si氧化物缺陷带。

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