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E center annealing in SiGe: Stability and charge states

机译：SiGe中的E中心退火：稳定性和电荷状态

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摘要

We have studied proton irradiated and annealed n-type SiGe with a P dopant concentration in the 1 × 10~(18) cm~(-3) range by positron annihilation spectroscopy. The Ge contents in the samples were 10, 20 and 30%. The results show that by annealing the irradiated samples at temperatures 250-350℃, the Ge content around the E center increases. Based on temperature-dependent and coincidence Doppler measurements, we conclude that the increase in Ge content around the E center pulls down the localized second acceptor state, found in Ge, into the SiGe band gap. This charge transition is observed even in samples annealed at 350 ℃, with a considerably higher thermal budget than expected for the complex to anneal completely.
机译：我们通过正电子ni没光谱研究了质子辐照和退火的P型掺杂浓度在1×10〜（18）cm〜（-3）范围内的n型SiGe。样品中的Ge含量为10％，20％和30％。结果表明，通过在250-350℃温度范围内对辐照样品进行退火处理，可以使E中心周围的Ge含量增加。基于温度相关和巧合多普勒测量，我们得出结论，E中心附近Ge含量的增加将Ge中发现的局部第二受主状态拉低到SiGe带隙中。即使在350℃退火的样品中也观察到这种电荷跃迁，其热收支明显高于复合物完全退火的预期。

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  • 来源
    《Materials Science and Engineering》 |2008年第2008期|p.141-143|共3页
  • 作者

    K. Kuitunen; S. Kilpelaeinen; J. Slotte; F. Tuomisto;

  • 作者单位

    Department of Engineering Physics. Helsinki University ofTechnology, P.O. Box 1100, FI-02015 TKK, Finland;

    Department of Engineering Physics. Helsinki University ofTechnology, P.O. Box 1100, FI-02015 TKK, Finland;

    Department of Engineering Physics. Helsinki University ofTechnology, P.O. Box 1100, FI-02015 TKK, Finland;

    Department of Engineering Physics. Helsinki University ofTechnology, P.O. Box 1100, FI-02015 TKK, Finland;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    semiconductors; silicon; germanium; defect formation; diffusion; positrons;

    机译：半导体;硅;锗;缺陷形成;扩散;正电子;

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