Correlation between static characteristics and deep levels in InAlAs/InGaAs/InP HEMT'S

M.M. Ben Salem; S. Bouzgarrou; N. Sghaier; A. Kalboussi; A. Souifi

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Correlation between static characteristics and deep levels in InAlAs/InGaAs/InP HEMT'S

机译：InAlAs / InGaAs / InP HEMT中的静态特性与深能级之间的相关性

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It is well known that trapping effects can limit the output power performance of microwave field-effect transistors (FETs). This is particularly true for the wide band gap devices. In this paper, we present a detailed study of drain Current Deep Level Transient Spectroscopy CDLTS measurements performed on InAlAs/InGaAs/InP HEMT of two different samples. We demonstrate that a remarkable correlation exists between deep levels observed by CDLTS and the presence of parasitic effects such as kink and hysteresis effects.

机译：众所周知，陷阱效应会限制微波场效应晶体管（FET）的输出功率性能。对于宽带隙设备尤其如此。在本文中，我们对两个不同样品的InAlAs / InGaAs / InP HEMT上进行的漏极电流深电平瞬态光谱CDLTS测量进行了详细研究。我们证明了CDLTS观察到的深层次与诸如扭结和滞后效应等寄生效应的存在之间存在显着的相关性。

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来源
《Materials Science and Engineering. B, Solid-State Materials for Advanced Technology》 |2006年第1期|p.34-40|共7页
作者
M.M. Ben Salem; S. Bouzgarrou; N. Sghaier; A. Kalboussi; A. Souifi;
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作者单位

Laboratoire de Physique des Semiconducteurs et des Composants Electroniques (LA-MA-06), Faculte des Sciences de Monastir, Avenue de l'Environnement, 5000 Monastir, Tunisia;

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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
semiconductor; HEMT; CDLTS; deep levels;

机译：半导体;HEMT;CDLTS;深层;

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专利

1. Influence of interface states and deep levels on output characteristics of InAlAs/InGaAs/InP HEMTs [J] . S. Bouzgarrou, Na. Sghaier, M.M. Ben Salem, Materials science & engineering . 2008,第5a6期

机译：界面状态和深度对InAlAs / InGaAs / InP HEMT输出特性的影响
2. 2-46.5 GHz quasi-static 2:1 frequency divider IC using InAlAs/InGaAs/InP HEMTs [J] . Otsuji T., Yoneyama M. Electronics Letters . 1997,第16期

机译：使用InAlAs / InGaAs / InP HEMT的2-46.5 GHz准静态2：1分频器IC
3. DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application [J] . Amin Boursali, Ahlam Guen-Bouazza, Choukria Sayah International Journal of Electrical and Computer Engineering . 2020,第2期

机译：直流和RF特性为20nm栅极长度Inalas / InGaAs / InP HEMTS用于高频应用
4. InP-InAlAs and InGaP-InAlAs mixed spacers to reduce the gate leakage current in InAlAs/InGaAs/InP HEMTs [C] . Letartre, X., Rojo-Romeo, Indium Phosphide and Related Materials, 1997., International Conference on . 1997

机译：InP-InAlAs和InGaP-InAlAs混合垫片可减少InAlAs / InGaAs / InP HEMT中的栅极泄漏电流
5. Simulation and Comparison of High Speed GaAsSb-InP and InGaAs-InP Uni-Traveling-Carrier Photodiodes [D] . Guneroglu, Ugur 2019

机译：高速GaAsSb-InP和InGaAs-InP单向载流子光电二极管的仿真与比较
6. The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures [O] . Xiaohong Zhao, Hongliang Lu, Manli Zhao, 2019

机译：深能级陷阱及其对InP / InGaAs异质结构电流特性影响的研究
7. Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well” [O] . G. B. Galiev, A. L. Vasiliev, R. M. Imamov, 2015

机译：错误到：“InP衬底上的Inalas / InGaAs / Inalas HEMT异质结构的结构和电性能与inaS阱插入量”

Correlation between static characteristics and deep levels in InAlAs/InGaAs/InP HEMT'S

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