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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Diffusion characteristics of gold in silicon and electrical properties of silicon diodes used for developing radiation-hard detectors
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Diffusion characteristics of gold in silicon and electrical properties of silicon diodes used for developing radiation-hard detectors

机译：金在硅中的扩散特性和用于开发抗辐射探测器的硅二极管的电性能

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摘要

Low-resistivity n-type silicon has been doped with gold and characterised using Rutherford backscattering spectrometry and Hall effect measurements. Schottky barrier diodes were fabricated on silicon with no gold and on gold-doped silicon and then characterised using current-voltage and capacitance-voltage measurements. Results from the material characterisation experiments show that the diffusion profile of gold in thin silicon substrates is U-shaped and that gold-doped silicon has a higher resistivity. Results from the device characterisation experiments indicate a deviation from "normal" diode behaviour to ohmic behaviour. The diode characteristics become typical of devices made of high resistivity material with relaxation-like properties, a material that is suitable for radiation-hard detector fabrication.
机译：低电阻n型硅已经掺杂了金，并使用卢瑟福背散射光谱和霍尔效应测量进行了表征。肖特基势垒二极管在没有金的硅上和掺金的硅上制造，然后使用电流-电压和电容-电压测量进行表征。材料表征实验的结果表明，金在薄硅衬底中的扩散曲线为U形，并且金掺杂的硅具有更高的电阻率。器件表征实验的结果表明，从“正常”二极管行为到欧姆行为都有偏差。二极管的特性成为由具有类似松弛特性的高电阻率材料制成的器件的典型特性，这种材料适合于辐射硬探测器的制造。

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