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Orientation of MgO thin films grown by pulsed laser deposition

机译：脉冲激光沉积生长的MgO薄膜的取向

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Pulsed laser deposition technique has been employed to grow MgO thin films with preferred orientation on Si( 100) and SiO_2/Si( 100) substrates. The orientation of MgO thin films has been investigated in detail by varying deposition parameters. XRD analyses showed that the preferred orientation of MgO thin films changed from (11 1) to (1 00) as laser fluence decreased and oxygen pressure increased to some extent. Substrate temperature seemed to have little influence on the orientation of MgO thin films deposited at high laser fluences. TEM images of the (10 0)-oriented MgO thin films on Si( 100) deposited at 400℃ and the laser fluence of 3 J/cm~2 in the oxygen pressure of 200 mTorr demonstrated that there existed a thin amorphous oxide layer of about 2 nm at MgO/Si interfaces due to the oxidation of the Si surface by the residual oxygen. MgO films with controlled orientations are suitable as a buffer layer for the growth of high-quality ferroelectric and superconducting overlayers.
机译：已采用脉冲激光沉积技术在Si（100）和SiO_2 / Si（100）衬底上生长具有最佳取向的MgO薄膜。已通过改变沉积参数详细研究了MgO薄膜的取向。 XRD分析表明，随着激光能量密度的降低和氧气压力的增加，MgO薄膜的择优取向由（11 1）变为（1 00）。衬底温度似乎对以高激光通量沉积的MgO薄膜的取向几乎没有影响。在400℃的氧气压力下在400℃沉积的Si（100）上的（10 0）取向MgO薄膜的TEM图像和3 J / cm〜2的激光能量密度表明存在一个薄的非晶氧化物层。由于残留氧使Si表面氧化，在MgO / Si界面处约2 nm。具有受控方向的MgO膜适合作为缓冲层，用于生长高质量的铁电和超导覆盖层。

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