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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Magnetic behavior of Mn_3GaN precipitates in ferromagnetic Ga_(1-x)Mn_xN layers
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Magnetic behavior of Mn_3GaN precipitates in ferromagnetic Ga_(1-x)Mn_xN layers

机译：Mn_3GaN的磁行为在铁磁Ga_（1-x）Mn_xN层中析出

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摘要

Ga_(1-x)Mn_xN layers (where x ≈ 10.4-12.5%) containing Mn_3GaN precipitates were grown on (0 0 0 1) sapphire substrates using molecular beam epitaxy, and were shown to exhibit two ferromagnetic phases. These p-type GaMnN films were revealed to have a well defined hysteresis loop up to T～ 200 K, which originates from the appreciable number of Mn_3GaN precipitates imbedded in the GaN matrix. The precipitated GaMnN samples exhibited a ferromagnetism due to Mn_3Ga clusters mixed with Mn_3GaN precipitates in the high temperature region (above 200 K). The Mn_3GaN precipitates and Mn_3Ga clusters were identified by X-ray diffraction and transmission electron microscopy. Mn_3GaN precipitates in the samples with a high Mn concentration have a characteristic transition temperature at T～200K, which was characterized from field-cooled and zero-field-cooled magnetization curves.
机译：使用分子束外延在（0 0 0 1）蓝宝石衬底上生长包含Mn_3GaN沉淀物的Ga_（1-x）Mn_xN层（其中x≈10.4-12.5％），并显示出两个铁磁相。这些p型GaMnN薄膜具有高达T〜200 K的明确的磁滞回线，这归因于GaN基质中嵌入的Mn_3GaN沉淀物的数量可观。由于Mn_3Ga团簇与Mn_3GaN析出物在高温区域（高于200 K）混合，因此，析出的GaMnN样品表现出铁磁性。通过X射线衍射和透射电子显微镜鉴定了Mn_3GaN沉淀物和Mn_3Ga簇。 Mn_3GaN Mn样品中的Mn_3GaN析出物在T〜200K处具有特征性的转变温度，这由场冷和零场磁化曲线表征。

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