Micro structures and thermoelectric properties of p-type pseudo-binary Bi-Sb-Te alloys with partial substitution of Ga for Sb prepared by spark plasma sintering

J.L. Cui; H.F. Xue; W.J. Xiu

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Micro structures and thermoelectric properties of p-type pseudo-binary Bi-Sb-Te alloys with partial substitution of Ga for Sb prepared by spark plasma sintering

机译：火花等离子体烧结制备的Ga部分替代Sb的p型准二元Bi-Sb-Te合金的微观结构和热电性能

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P-type pseudo-binary Bi-Sb-Te alloys with Ga substitution for Sb in raw mixtures were prepared by spark plasma sintering (SPS) technique, results show that a proper Ga substitution for Sb can improve the thermoelectric performance near room temperature. With molar fraction x increasing from 0 to 0.1 in the Ga_xBi_(0.5)Sb_(1.5-x)Te_3 alloys, a ratio σ/κ can be enhanced from 23,178 to 34,807 K V~(-2) at 318 K, without noticeable loss of Seebeck coefficients. The maximum ZT value of 0.65 (± 0.16) is achieved, being approximate 0.11 higher than that of Bi_(0.5)Sb_(1.5)Te_3.

机译：采用火花等离子体烧结（SPS）技术制备了Ga替代Sb的P型准二元Bi-Sb-Te合金，结果表明适当的Ga替代Sb可以改善室温附近的热电性能。在Ga_xBi_（0.5）Sb_（1.5-x）Te_3合金中，随着摩尔分数x从0增加到0.1，在318 K下σ/κ比可以从23178 KV〜（-2）提高到34807 KV〜（-2），而不会明显损失塞贝克系数。最大ZT值达到0.65（±0.16），比Bi_（0.5）Sb_（1.5）Te_3的ZT值高约0.11。

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来源
《Materials Science and Engineering. B, Solid-State Materials for Advanced Technology》 |2006年第1期|p.44-49|共6页
作者
J.L. Cui; H.F. Xue; W.J. Xiu;
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作者单位

School of Mechanical Engineering, Ningbo University of Technology, Ningbo 315016, China;

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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
thermoelectric properties; pseudo-binary Bi-Sb-Te alloys; gallium substitution for antimony; spark plasma sintering; microstructure;

机译：热电性能;伪二元Bi-Sb-Te合金;镓替代锑;火花等离子体烧结;显微组织;

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Micro structures and thermoelectric properties of p-type pseudo-binary Bi-Sb-Te alloys with partial substitution of Ga for Sb prepared by spark plasma sintering

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