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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >The effect of biaxial strain on impurity diffusion in Si and SiGe
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The effect of biaxial strain on impurity diffusion in Si and SiGe

机译：双轴应变对Si和SiGe中杂质扩散的影响

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摘要

Results from diffusion studies of different impurities in biaxially strained Si and Si_(1-x)Ge_x for low x-values will be presented. The structures are all molecular-beam epitaxy (MBE) grown on strain-relaxed Si_(1-x)Ge_x layers, and the impurity profiles are introduced during growth. We have in particular been concerned with the effect of biaxial strain (compressive and tensile) on the diffusion of pure vacancy-assisted diffusers (Sb and, partly, Ge) and pure interstitial-assisted diffusers (B and P). It is found that compressive biaxial strain retards the diffusion of the interstitial-assisted diffusers, whereas tensile biaxial strain enhances the diffusion of these impurities. The opposite is the case for the vacancy-assisted diffusers.
机译：将给出低x值下双轴应变Si和Si_（1-x）Ge_x中不同杂质扩散研究的结果。这些结构都是在应变松弛的Si_（1-x）Ge_x层上生长的分子束外延（MBE），并且在生长过程中引入了杂质分布。我们尤其关注双轴应变（压缩和拉伸）对纯空位辅助扩散器（Sb，部分为Ge）和纯间隙辅助扩散器（B和P）的扩散的影响。已经发现，压缩双轴应变阻碍了间隙辅助扩散器的扩散，而拉伸双轴应变则增强了这些杂质的扩散。空位辅助扩散器的情况则相反。

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