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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Residual stress in amorphous and nanocrystalline Si films prepared by PECVD with hydrogen dilution
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Residual stress in amorphous and nanocrystalline Si films prepared by PECVD with hydrogen dilution

机译：PECVD在氢气稀释下制备的非晶和纳米晶Si膜中的残余应力

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摘要

Amorphous and nanocrystalline Si films were prepared using radio-frequency (13.56 MHz) plasma enhanced chemical vapour deposition with different SiH_4/H_2 ratios. The film residual stress was measured using curvature method as a function of SiH_4 gas flow ratio (SiH_4/(SiH_4 + H_2)). Results from high resolution scanning electron microscopy, X-ray diffraction and Raman scattering studies revealed the appearance of nanocrys-tallites with SiH_4 gas ratio less than 3%. With a gradual decrease of SiH_4 gas ratio, the film intrinsic stress increased significantly until SiH_4 gas ratio reached 2%. Below that critical value, the film intrinsic stress decreased sharply. Different mechanisms of stress formation and relaxation during film growth were discussed, including ion bombardment effect, hydrogen and hydrogen induced bond-reconstruction, nanocomposite effects (nanocrystal embedded in an amorphous Si matrix). Results indicated that nanocomposite effect is the dominant factor in this maximum stress condition.
机译：使用射频（13.56 MHz）等离子增强化学气相沉积法以不同的SiH_4 / H_2比制备非晶态和纳米晶硅膜。使用曲率法测量膜残余应力作为SiH_4气体流量比（SiH_4 /（SiH_4 + H_2））的函数。高分辨率扫描电子显微镜，X射线衍射和拉曼散射研究的结果表明，SiH_4气体比率小于3％的纳米晶体-斜晶石的外观。随着SiH_4气体比例的逐渐降低，薄膜固有应力显着增加，直到SiH_4气体比例达到2％。低于该临界值，膜的固有应力急剧下降。讨论了膜生长过程中应力形成和松弛的不同机理，包括离子轰击效应，氢和氢诱导的键重建，纳米复合效应（纳米晶体嵌入非晶硅基质中）。结果表明，纳米复合材料效应是该最大应力条件下的主导因素。

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