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首页> 外文期刊>Nanotechnology >Nanocrystalline silicon films prepared from silane plasma in RF-PECVD, using helium dilution without hydrogen: structural and optical characterization
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Nanocrystalline silicon films prepared from silane plasma in RF-PECVD, using helium dilution without hydrogen: structural and optical characterization

机译：在没有氢的情况下使用氦稀释在射频等离子体化学气相沉积中由硅烷等离子体制备的纳米晶硅膜：结构和光学表征

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The effect of RF power on the nanocrystallization of a Si:H network has been studied by PECVD at a substrate temperature of 200 deg C and a gas pressure of 0.5 Torr, using silane as the source gas and helium as diluent, without using hydrogen. Optical characterization of the films has been done by UV-vis spectroscopy. Structural characterization has been performed by infrared absorption, x-ray diffraction, micro-Raman studies and electron microscopy by HRTEM and FESEM. In general, a structural transformation from the amorphous to nanocrystalline phase accomplished by metastable helium atoms in the plasma has been identified at a low RF power of 80 W. With an increase in the applied RF power up to 150 W, systematic improvement in crystallinity has been shown as depicted by increased crystalline volume fraction (approx 77 percent), smaller grain size (approx 7 nm) reduced bonded hydrogen content (approx 8 at. percent), enhanced polymerization in the network and gradual widening in the optical gap (approx 1.86 eV) obtained at a high deposition rate (107 A min~(-1)), using 1 seem of silane as the source gas and helium as the only diluent. He dilution of the SitH_4 plasma is a well-proven approach to increase the growth rate. However, a nanocrystalline network with high crystalline volume fraction and well-aligned crystallographic lattice distribution, attained in Sight from a low-power RF plasma at a growth temperature as low as 200 deg C, and that obtained from purely He dilution, without using H_2, is being reported for the first time. The striking feature comprises that nc-Si:H films of increasing crystalline volume fraction, reduced bonded hydrogen content and wider optical gap are produced with simultaneously increasing deposition rates, which deserves extensive technological impact.
机译：在不使用氢气的情况下，使用硅烷作为原料气，使用氦气作为稀释剂，在200摄氏度的衬底温度和0.5托的气压下，通过PECVD研究了RF功率对Si：H网络纳米晶化的影响。膜的光学表征已经通过紫外可见光谱法完成。通过红外吸收，x射线衍射，显微拉曼研究和HRTEM和FESEM的电子显微镜进行了结构表征。通常，已经确定在80 W的低RF功率下通过等离子体中的亚稳态氦原子完成了从非晶态到纳米晶相的结构转变。随着所施加的RF功率增加到150 W，结晶度的系统改善得到了改善。如图所示，通过增加晶体体积分数（约77％），减小晶粒尺寸（约7 nm），减少键合氢含量（约8 at。％），增强网络中的聚合以及逐渐扩大光学间隙（约1.86）来描述eV）以1sccm的硅烷作为原料气和氦气作为唯一稀释剂以高沉积速率（107 A min〜（-1））获得。稀释SitH_4血浆是一种成熟的方法，可以提高生长速率。然而，在低至200℃的生长温度下，通过低功率RF等离子体在Sight中获得了具有高晶体体积分数和良好排列的晶格分布的纳米晶体网络，并且该晶体网络完全由He稀释而无需使用H_2 ，是第一次报告。引人注目的特征在于，在增加沉积速率的同时，生产出晶体体积分数增加，键合氢含量降低和光学间隙增大的nc-Si：H薄膜，这值得广泛的技术影响。

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