• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si_(0.5)Ge_(0.5) virtual substrate
【24h】

Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si_(0.5)Ge_(0.5) virtual substrate

机译：在Si_（0.5）Ge_（0.5）虚拟衬底上生长的Ge / Si双通道中的定量应变和应力测量

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The incorporation of compressive strained Ge/tensile strained Si bi-layers in the active regions of MOSFETs is a promising route for creating ultimate Si-based devices due to the considerable increase of the mobility of spatially confined holes/electrons. The main challenge in device application is to be able to control and manipulate strain within such thin layers. This paper reports on quantitative measurements of strain in a structure consisting of a 8nm Ge/5nm Si heterostructure grown by chemical vapour deposition on top of a relaxed Si_(0.5)Ge_(0.5) buffer layer. Geometric phase analysis of high resolution TEM images is used to measure the strain within Ge and Si layers. The in-plane stress within each layer is deduced. Experimental results are compared with the predictions of elasticity theory and discussed in terms of effect of defect formation.
机译：由于在空间上受限的空穴/电子的迁移率显着提高，因此在MOSFET的有源区中引入压缩应变的Ge /拉伸应变的Si双层是创建最终的基于Si的器件的有希望的途径。装置应用中的主要挑战是能够控制和操纵此类薄层内的应变。本文报道了在由松弛的Si_（0.5）Ge_（0.5）缓冲层顶部通过化学气相沉积法生长的8nm Ge / 5nm Si异质结构组成的结构中应变的定量测量结果。高分辨率TEM图像的几何相位分析用于测量Ge和Si层内的应变。推导出每一层内的面内应力。将实验结果与弹性理论的预测结果进行比较，并根据缺陷形成的影响进行讨论。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号