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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Optimisation of the parameters of an extended defect model applied to non-amorphizing implants
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Optimisation of the parameters of an extended defect model applied to non-amorphizing implants

机译：非非晶植入物扩展缺陷模型参数的优化

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In this paper, we present the optimisation of the parameters of a physical model of the kinetics of extended defects and applied the model with the optimised parameters to non-amorphizing implants. The model describes the small clusters, the {113} defects and the dislocation loops. In the first part, we determine the formation energies of the small clusters, the fault energy of the {113 } defects, their Burgers vector and the self-diffusivity of silicon using TEM measurements and extractions of the supersaturation from the spreading of boron marker layers in low-dose implanted silicon. The improvements of the simulations are presented for the fitted experiments and for other wafers annealed at intermediate temperatures. In the second part, we increase the dose and energy of the non-amorphizing implant, leading to the transformation of {113} defects into dislocation loops. The predictions obtained with the optimised model are shown to be in agreement with the measurements.
机译：在本文中，我们介绍了延伸缺陷动力学模型的参数优化，并将具有优化参数的模型应用于非非晶化植入物。该模型描述了小簇，{113}缺陷和位错环。在第一部分中，我们使用TEM测量和从硼标记层分布中提取的过饱和度来确定小团簇的形成能，{113}缺陷的断能，其Burgers向量以及硅的自扩散性。在低剂量植入的硅中。针对拟合实验和在中间温度下退火的其他晶圆，提供了模拟的改进。在第二部分中，我们增加了非非晶化植入物的剂量和能量，导致{113}缺陷转变为位错环。通过优化模型获得的预测显示与测量结果一致。

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