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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Modelisation of optoelectronic device based on Si/SiO_2 emitting red light
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Modelisation of optoelectronic device based on Si/SiO_2 emitting red light

机译：基于发射红光的Si / SiO_2的光电器件的建模

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摘要

In the attempt to realize quantum devices based on a resonant tunneling effect through Si/SiO_2 and emitting a red light at a key 0.644 μm wavelength, we have modeled SiO_2/Si/SiO_2 double barriers embedded between two n-doped Si layers. To study the quantum confinement in Si QW and obtain the potential shape, we have solved a set of coupled Schroedinger-Poisson equations self-consistently. The effects of Si well thickness on quantum confinement of electrons and heavy-holes levels are presented. The fundamental energy transition and oscillator strength are also examined as a function of well width. A blue shift of the emission energy is observed, when the thickness of the Si well is reduced. The desired red light at a key 0.644 μm wavelength is obtained with an acceptable recombination efficiency given by transition oscillator strength. The effect of an applied electric field has been investigated for this red emission.
机译：为了尝试实现基于穿过Si / SiO_2的共振隧穿效应并发射波长为0.644μm的红光的量子器件，我们对嵌入在两个n掺杂Si层之间的SiO_2 / Si / SiO_2双势垒进行了建模。为了研究Si QW中的量子约束并获得势能形状，我们自洽求解了一组耦合的Schroedinger-Poisson方程。给出了硅阱厚度对电子量子约束和重空穴能级的影响。还检查了基本能量跃迁和振荡器强度与阱宽度的关系。当Si阱的厚度减小时，观察到发射能量的蓝移。以过渡振荡器强度给出的可接受的重组效率，获得了关键的0.644μm波长的期望红光。对于这种红色发射，已经研究了施加电场的影响。

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