An investigation on the modeling of boron-enhanced diffusion of ultralow energy implanted boron in silicon

J. Marcon; L. Ihaddadene-Le Coq; K. Masmoudi; K. Ketata

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An investigation on the modeling of boron-enhanced diffusion of ultralow energy implanted boron in silicon

机译：超低能注入的硼在硅中硼增强扩散的模型研究

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摘要

We have simulated the boron-enhanced diffusion (BED) of boron implanted in silicon. We have used published data for B implantation with an energy of 500 eV in crystalline silicon. The simulation well reproduces the experimental profiles when sinks for interstitials are considered. Sources and sinks of self-interstitials are discussed as function of temperature.

机译：我们已经模拟了注入到硅中的硼的硼增强扩散（BED）。我们已经使用已发布的数据以500 eV的能量在晶体硅中进行B注入。当考虑到插页式广告接收器时，该模拟很好地再现了实验配置文件。自我插页式广告的来源和来源作为温度的函数进行了讨论。

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《Materials Science and Engineering. B, Solid-State Materials for Advanced Technology》 |2005年第12期|p.415-418|共4页
作者
J. Marcon; L. Ihaddadene-Le Coq; K. Masmoudi; K. Ketata;
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作者单位

Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), University of Rouen, 76821 Mont Saint Aignan, France;

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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
boron; transient enhanced diffusion; boron-enhanced diffusion; simulation;

机译：硼;瞬态增强扩散;硼增强扩散;模拟;

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专利

1. Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator [J] . M. Ferri, S. Solmi, D. Giubertoni, Journal of Applied Physics . 2007,第10期

机译：超低能硼注入物在预非晶硅和绝缘体上硅中的向上扩散
2. Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation [J] . B. C. Johnson, J. C. McCallum, A. J. Atanacio, Applied Physicsletters . 2009,第10期

机译：离子注入形成的非晶硅中本征和增强的氢扩散
3. Diffusion modelling of low-energy ion-implanted BF_2 in crystalline silicon: Study of fluorine vacancy effect on boron diffusion [J] . J. Marcon, A. Merabet Materials Science and Engineering . 2008,第期

机译：低能离子注入BF_2在晶体硅中的扩散模型：氟空位对硼扩散的影响研究
4. Temperature-and time-dependence of boron-enhanced diffusion from evaporated-and ultra-low energy ion-implanted layers [C] . Aditya Agarwal, H.-J.Gossmann, D.J.Eaglesham Symposium on Si Front-End Processing - Physics and Technology of Dopant-Defect Interfactions held April 6-9, 1999,San Francisco, California, U.S.A. . 1999

机译：蒸发和超低能离子注入层中硼增强扩散的温度和时间依赖性
5. Physics and modeling of ion implantation induced transient deactivation and diffusion processes in boron doped silicon. [D] . Chakravarthi, Srinivasan. 2001

机译：离子注入引起的硼掺杂硅瞬态失活和扩散过程的物理学和建模。
6. The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing [O] . Fu-Ying Lee, Zong-Zhe Wu, Li-Chi Kao, -1

机译：超低能大剂量硼注入Si（110）的化学状态和原子结构演变
7. Boron-enhanced diffusion of boron from ultralow-energy boron implantation [O] . Agarwal, A., Eaglesham, D.J., Gossmann, H.J., 1998

机译：从超低能量硼注入中硼增强硼的扩散
8. Boron-enhanced diffusion of boron from ultralow-energy boron implantation [R] . Agarwal, A. , Eaglesham, D. J. , Gossmann, H. J. , 1998

机译：从超低能量硼注入中硼增强硼的扩散

An investigation on the modeling of boron-enhanced diffusion of ultralow energy implanted boron in silicon

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