...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Structural characterisation of self-implanted Si after HT-HP treatment
【24h】

Structural characterisation of self-implanted Si after HT-HP treatment

机译：高温高压处理后自植入硅的结构表征

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Recovery of damages in implanted silicon is still not fully understood. In this work, self-implanted silicon Si:Si is a model material. The implantation-damaged area in Si:Si is under high quasi-hydrostatic stress. Therefore, the application of external hydrostatic pressure (HP) at annealing of Si:Si samples gives possibility to obtain valuable information on the stress-related effects during out-annealing of structural damages. Czochralski grown single crystalline silicon (Cz-Si) samples were subjected to the implantation with Si~+ ions (silicon dose D = 5 x 10~(16) cm~(-2)) at 160 keV energy (E). The Si:Si samples were treated at a high temperature (HT) up to 1130℃ under hydrostatic argon pressure up to 1.1 GPa for 5h. Changes in the dielectric function (ε) in both the as-implanted and HT-HP treated silicon samples have been determined. The considerable amelioration of both optical and structural properties of the self-implanted silicon samples for such treatment conditions like pressure, p = 1.1 Gpa; temperature, T= 800℃; time, t = 5 h has been observed. For samples treated under 1.1 GPa and for 5h, both real part (ε_1) and imaginary part (ε_2) of dielectric constant decreased with the increase of temperature in all spectral range. The agreement between results obtained by spectroscopic ellipsometry (SE) and other optical techniques has been found.
机译：恢复植入的硅中的损伤的方法仍不完全清楚。在这项工作中，自植入硅Si：Si是模型材料。 Si：Si的注入损伤区域处于高准静压力下。因此，在对Si：Si样品进行退火时施加外部静水压力（HP）使得获得关于结构损伤的外部退火过程中与应力相关的影响的有价值的信息成为可能。将直拉生长的单晶硅（Cz-Si）样品以160 keV能量（E）注入Si〜+离子（硅剂量D = 5 x 10〜（16）cm〜（-2））。 Si：Si样品在高达1130℃的高温（HT）和高达1.1 GPa的静水氩气压力下处理了5小时。已经确定了在植入的样品和经HT-HP处理的硅样品中介电函数（ε）的变化。对于诸如压力p = 1.1 Gpa之类的处理条件，自植入硅样品的光学和结构特性均得到了显着改善。温度，T = 800℃；时间，观察到t ＝ 5小时。对于在1.1 GPa和5h下处理的样品，介电常数的实部（ε_1）和虚部（ε_2）随温度在所有光谱范围内的升高而降低。已经发现通过椭圆偏振光谱法（SE）获得的结果与其他光学技术之间的一致性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号