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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Accurate and efficient TCAD model for the formation and dissolution of small interstitial clusters and {311} defects in silicon
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Accurate and efficient TCAD model for the formation and dissolution of small interstitial clusters and {311} defects in silicon

机译：精确有效的TCAD模型，用于形成和溶解硅中的小间隙团簇和{311}缺陷

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摘要

In recent years, physics-based models have been developed for the time evolution of defects formed by Si self-interstitials in ion-implanted Si. The accuracy of these models is crucial for a predictive process simulation of deep sub micron devices. However, the most complete models are usually not considered in applied process simulation, because they use too many equations. In this work, a new model is presented in which the essential physics behind the formation and dissolution of small interstitial clusters and {311} defects is described by a minimum set of five reaction equations. Three equations describe the kinetics of small interstitial clusters which governs the initial phase of implantation damage annealing. Two equations describe the formation and Ostwald ripening of {311} defects. The model is capable to reproduce experimental data over a wide range of implantation energies, doses and anneal temperatures. It allows predictive simulations of interstitial cluster kinetics at a minimum computational cost.
机译：近年来，已经开发了基于物理的模型，用于离子注入Si中由Si自填隙形成的缺陷随时间的变化。这些模型的准确性对于深亚微米设备的预测过程仿真至关重要。但是，在应用过程仿真中通常不考虑最完整的模型，因为它们使用了太多的方程式。在这项工作中，提出了一个新模型，其中通过最少的五个反应方程式描述了小间隙团簇和{311}缺陷的形成和溶解背后的基本物理原理。三个方程式描述了小间隙簇的动力学，该动力学控制着植入损伤退火的初始阶段。两个方程描述了{311}缺陷的形成和Ostwald成熟。该模型能够在各种注入能量，剂量和退火温度范围内重现实验数据。它允许以最小的计算成本进行间隙性团簇动力学的预测模拟。

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