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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Effect of fluorine on boron thermal diffusion in the presence of point defects
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Effect of fluorine on boron thermal diffusion in the presence of point defects

机译：点缺陷存在下氟对硼热扩散的影响

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With the increased interest in the use of fluorine co-implantation with boron for boron diffusion suppression in MOSFET devices, it is important to understand the mechanisms by which fluorine reduces boron diffusion. Mechanisms, such as B-F chemical reaction, vacancy-fluorine clusters and fluorine-interstitials interactions have been proposed in the literature. In this paper, a point defect injection is done to investigate the mechanism responsible for boron TED and thermal diffusion suppression in F~+ and B~+ implanted silicon. A 5 keV, 7 x 10~(12) cm~(-2) B~+ implant into silicon is used which is typical for halo implants in n-MOS. Three F~+ energies, 5, 50 and 185 keV, are used. It is followed by rapid thermal annealing at 900-1000℃ for different times in N_2 for an inert anneal and O_2 for injection of interstitial point defects from the surface. Fluorine profiles for samples implanted with 185keV F~+ and annealed in N_2 show two fluorine peaks at ～R_p and ～R_p/2. Under interstitial injection, the R_p/2 peak decreases in size and for long anneal times is completely eliminated, supporting an earlier claim that the R_p/2 peak is due to vacancy-fluorine clusters. The amount of suppression of both boron TED and thermal diffusion at 900 and 1000℃ anneal is correlated to the amount of fluorine remaining after anneal.
机译：随着人们越来越关注将氟与硼共注入用于抑制MOSFET器件中的硼扩散，重要的是了解氟减少硼扩散的机理。在文献中已经提出了诸如B-F化学反应，空位-氟簇和氟-间隙相互作用的机理。本文进行了点缺陷注入，研究了硼离子TED和F〜+和B〜+注入硅中热扩散抑制的机理。在硅中使用了5 keV，7 x 10〜（12）cm〜（-2）B〜+注入，这对于n-MOS中的晕环注入是典型的。使用了三个F〜+能量，即5、50和185 keV。随后在900-1000℃的N_2中进行不同时间的快速热退火，以进行惰性退火，然后在O_2中进行热退火，以从表面注入间隙点缺陷。注入185keV F〜+并在N_2中退火的样品的氟分布显示在〜R_p和〜R_p / 2有两个氟峰。在间隙注入下，R_p / 2峰的尺寸减小，并且长时间消除了退火时间，这完全支持了先前的说法，R_p / 2峰是由于空位氟团簇所致。 900和1000℃退火对TED硼的抑制作用和热扩散都与退火后残留的氟量相关。

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