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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Annealing behavior comparison of NTD FZ (H) Si irradiated in light-water-reactor and heavy-water-reactor
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Annealing behavior comparison of NTD FZ (H) Si irradiated in light-water-reactor and heavy-water-reactor

机译：轻水反应器和重水反应器辐照NTD FZ（H）Si的退火行为比较

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摘要

Electrical properties and defect annealing behavior of neutron transmutation doping Si (NTD Si) grown by floating-zone (FZ) method in a hydrogen (H) atmosphere were studied by resistivity measurements, optical microscopy and infrared (IR) absorption spectra. The NTD of the crystal silicon ingots was performed in a light-water-reactor [L NTD FZ (H) Si] and a heavy-water-reactor [H NTD FZ (H) Si] respectively. A comparison of annealing behaviors has been made between the L NTD FZ (H) Si and H NTD FZ (H) Si samples. After annealing at approx 480 deg C an excess donor concentration has been observed in both crystals. L NTD FZ (H) Si and H NTD FZ (H) Si. The values for the donor decomposition activation energy are about 1.5 and 0.4 eV in the annealing temperature ranges of 500-540, and 580-640 deg C, respectively. There is a peripheral lag during the conductivity conversion from p- to n-type in the L NTD FZ (H) Si but not in H NTD FZ (H) Si samples. Hydrogen-related defects (big pits) in H NTD FZ (H) Si samples and micro-defects in L NTD FZ (H) Si samples were observed by optical microscopy.
机译：通过电阻率测量，光学显微镜和红外（IR）吸收光谱研究了通过浮区（FZ）方法在氢（H）气氛中生长的中子trans杂掺杂硅（NTD Si）的电性能和缺陷退火行为。晶体硅锭的NTD分别在轻水反应器[L NTD FZ（H）Si]和重水反应器[H NTD FZ（H）Si]中进行。已对L NTD FZ（H）Si和H NTD FZ（H）Si样品之间的退火行为进行了比较。在约480摄氏度下退火后，在两个晶体中均观察到过量的供体浓度。 L NTD FZ（H）Si和H NTD FZ（H）Si。供体分解活化能的值在500-540和580-640℃的退火温度范围内分别为约1.5和0.4eV。在L NTD FZ（H）Si样品中，电导率从p型转换为n型时存在外围滞后，而在H NTD FZ（H）Si样品中则没有。通过光学显微镜观察了H NTD FZ（H）Si样品中与氢有关的缺陷（大凹坑）和L NTD FZ（H）Si样品中的微缺陷。

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