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Injection induced charging of HfO_2 insulators on Si

机译：硅上HfO_2绝缘子的注入诱导充电

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摘要

Charge trapping in HfO_2 films on Si(100) was studied using generation of electron-hole pairs in the oxide by 10 eV photons. The oxide deposition chemistry strongly influences the density and sign of the tapped charge: positive charge is observed in films obtained from HfCl_4 and metallo-organics, while negative charge is dominant in the films grown from Hf(NO_3)_4. The weak dependence of the trapped charge on the HfO_2 thickness suggests that charging is associated with a silicon oxide interlayer grown between the Si and HfO_2 during deposition. The latter is affirmed by enhancement of the charging after oxidation of the samples at 650 deg C, indicating the interfacial silicon oxide as being the key factor determining the electrical stability of the HfO_2 insulating stacks.
机译：利用10 eV光子在氧化物中生成电子-空穴对，研究了Si（100）上HfO_2膜中的电荷俘获。氧化物沉积化学性质强烈影响抽头电荷的密度和符号：在从HfCl_4和金属有机物获得的薄膜中观察到正电荷，而在从Hf（NO_3）_4生长的薄膜中则占主导地位。捕获的电荷对HfO_2厚度的弱依赖性表明，电荷与沉积过程中在Si和HfO_2之间生长的氧化硅中间层有关。后者通过样品在650摄氏度氧化后的充电增强得到肯定，表明界面氧化硅是决定HfO_2绝缘叠层电稳定性的关键因素。

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