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Sputter deposited Pt-Ir oxides thin films and their characterization

机译：溅射沉积的Pt-Ir氧化物薄膜及其表征

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摘要

Pt-Ir and their oxides mixture thin films were prepared on Si(100) substrates at temperatures 500 and 600 deg C by reactive rf magnetron sputtering with Pt-20 mass percent Ir target and Ir chips set on the target. X-ray fluorescence analysis revealed that deposited films had a composition from Pt-20 mass percent Ir to Pt-60 mass percent Ir. Further Increase in Ir contents in the films resulted in a delamination of films from Si substrate. Deposition atmosphere was varied with O_2/Ar flow ratio from 0 to 20 percent. Deposited films consisted of Pt-Ir alloy and their oxides such as PtO, PtO_2 and IrO_2, which were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Electric resistivity of the films was measured to be from the order of 10~(-4) to 10~(-3) OMEGA cm by dc four probe method. In order to study performance of the films as electrode, SrTiO_3 as dielectrics and Pt as upper electrode were sputter deposited on Pt-Ir oxide/Si substrates in order. And current/voltage characteristics of SrTiO_3 were measured. Leakage current density of SrTiO_3 with 200 nm in thickness deposited on Pt-50 mass percent Ir oxide electrodes and on Pt-50 mass percent Ir alloy electrode were 1.7 X 10~(-7) and 1.0 X 10~(-6) A/cm~2 at 2.0V of applied voltage, respectively. With 100 nm in thickness, however, showed poor current/voltage characteristics.
机译：通过反应射频磁控溅射在Pt-20质量百分比的Ir靶材上设置Ir芯片，在500和600℃的温度下，在Si（100）衬底上制备了Pt-Ir及其氧化物混合物薄膜。 X射线荧光分析表明，沉积膜的组成为Pt-20质量％Ir至Pt-60质量％Ir。膜中Ir含量的进一步增加导致膜与Si衬底分层。沉积气氛随O_2 / Ar流量比从0％到20％的变化而变化。沉积膜由Pt-Ir合金及其氧化物如PtO，PtO_2和IrO_2组成，并通过X射线衍射（XRD）和X射线光电子能谱（XPS）表征。通过直流四探针法测得的薄膜的电阻率为OMEGA cm的10〜（-4）到10〜（-3）cm。为了研究作为电极的膜的性能，在Pt-Ir氧化物/ Si衬底上依次沉积了作为电介质的SrTiO_3和作为上电极的Pt。并测量了SrTiO_3的电流/电压特性。沉积在Pt-50质量百分比的Ir氧化物电极和Pt-50质量百分比的Ir合金电极上的厚度为200 nm的SrTiO_3的漏电流密度为1.7 X 10〜（-7）和1.0 X 10〜（-6）A /在施加电压2.0V时分别为cm〜2。但是，厚度为100 nm时，电流/电压特性较差。

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