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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Reduction of crystallization temperature of the Nd-Fe-B thin films by Cu addition
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Reduction of crystallization temperature of the Nd-Fe-B thin films by Cu addition

机译：添加铜降低Nd-Fe-B薄膜的结晶温度

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摘要

Nonmagnetic Cu element has been doped into the sputtered Nd-Fe-B thin films. It is found that the introduction of suitable amount of copper atoms could reduce the crystallization temperature of the 2:14:1 phase by near 100 deg C, compared with that without Cu. For the 15 nm Nd_(16)Fe_(70.2)Cu_(1.8)B_(12) film deposited at 340 deg C, perpendicular coercivity and remanent magnetization ratio of 350 kA/m and 0.96 have been successfully obtained. Cu addition would lead to the grain growth, but the average grain size in the films could be greatly decreased through lowering the deposition temperature. These results are compared with those found in the fabrication of FePtCu films.
机译：非磁性Cu元素已经被掺杂到溅射的Nd-Fe-B薄膜中。发现与没有Cu的铜原子相比，引入适量的铜原子可以将2：14：1相的结晶温度降低近100℃。对于在340℃下沉积的15 nm Nd_（16）Fe_（70.2）Cu_（1.8）B_（12）膜，成功获得了350 kA / m的垂直矫顽力和剩磁比和0.96。添加铜会导致晶粒长大，但是通过降低沉积温度可以大大降低薄膜中的平均晶粒尺寸。将这些结果与制造FePtCu膜时发现的结果进行了比较。

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