The formation of inorganic oxide insulators for use in ULSIs formed from organic sources

Keiji Kobayashi

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The formation of inorganic oxide insulators for use in ULSIs formed from organic sources

机译：用于由有机源形成的ULSI中的无机氧化物绝缘体的形成

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It is epoch-making that we should form inorganic glasses from organic sources, which are favorable for insulators in ULSIs. The capacitance-voltage (C-V) characteristics of MOS capacitors annealed in N_2 gas were more improved than those of MOS capacitors annealed in F_2 gas. Particularly, the hysteresis and C-V curve shifts for MOS capacitors which passivated when low cation polarizable borophosphosili-cate glass is applied to MOS device, showed the best properties. Low polarizable and N_2 gas-annealed glass showed good dielectric planarizing and low delay time capability as required for the step coverage of multilevel interconnections. Possible applications of these insulators to advanced MOS devices are discussed.

机译：我们应该从有机源中形成无机玻璃，这是极具开创性的，这对于ULSI中的绝缘子是有利的。在N_2气体中退火的MOS电容器的电容-电压（C-V）特性比在F_2气体中退火的MOS电容器的电容-电压（C-V）特性得到了更大的改善。特别是，当将低阳离子可极化硼磷硅酸盐玻璃应用于MOS器件时，钝化的MOS电容器的磁滞和C-V曲线位移显示出最佳性能。低偏振和N_2气体退火玻璃表现出良好的介电平面化性能和低延迟时间能力，这是多层互连的逐步覆盖所需要的。讨论了这些绝缘子在高级MOS器件中的可能应用。

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来源
《Materials Science and Engineering. B, Solid-State Materials for Advanced Technology》 |2004年第1期|p.20-24|共5页
作者
Keiji Kobayashi;
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作者单位

Advanced Inorganic Materials Laboratory, 3-11-12 Nakazawa, Asahi, Yokohama 241-0814, Japan;

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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
borophosphate glasses; silicate crystal; MOS capacitors;

机译：硼磷酸盐玻璃;硅酸盐晶体;MOS电容器;

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The formation of inorganic oxide insulators for use in ULSIs formed from organic sources

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