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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation
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Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation

机译:氮化物侧壁间隔物工艺对超浅结形成中硼剂量损失影响的基本特征

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A nitride spacer with an underlying deposited tetraethoxysilane (TEOS) oxide that behaves as a convenient etch stop layer is a popular choice for sidewall spacer in modern complementary metal oxide semiconductor (CMOS) process flows. In this work, we have investigated the effect of the silicon nitride spacer process chemistry on the boron profile in silicon and the related dose loss of B from Si into silicon dioxide. This is reflected as a dramatic change in the junction depth, junction abruptness and junction peak concentration for the different nitride chemistries, We conclude that the silicon nitride influences the concentration of hydrogen in the silicon dioxide and different nitride chemistries result in different concentrations of hydrogen in the silicon dioxide during the final source/drain anneal. The presence of H enhances the diffusivity of B in the silicon dioxide and thereby results in a significant dose loss from the Si into the silicon dioxide. In this work, we show that this dose loss can be minimized and the junction profile engineered by choosing a desirable nitride chemistry.
机译:在现代互补金属氧化物半导体(CMOS)工艺流程中,具有底层沉积四乙氧基硅烷(TEOS)氧化物的氮化物间隔层可作为方便的蚀刻停止层,是侧壁间隔层的普遍选择。在这项工作中,我们研究了氮化硅间隔物化学过程对硅中硼分布的影响以及相关的B从Si到二氧化硅的剂量损失。这反映为不同氮化物化学结构的结深,结突变和结峰浓度的急剧变化。我们得出结论,氮化硅影响二氧化硅中氢的浓度,不同的氮化物化学结构会导致不同浓度的氢。在最后的源极/漏极退火过程中产生的二氧化硅。 H的存在增强了B在二氧化硅中的扩散性,从而导致从Si到二氧化硅的显着剂量损失。在这项工作中,我们表明可以通过选择所需的氮化物化学物质来最大程度地减少剂量损失,并设计结轮廓。

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