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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >A simple two-step phosphorus doping process for shallow junctions by applying a controlled adsorption and a diffusion in an oxidising ambient
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A simple two-step phosphorus doping process for shallow junctions by applying a controlled adsorption and a diffusion in an oxidising ambient

机译：通过在氧化环境中施加受控的吸附和扩散，对浅结进行简单的两步磷掺杂工艺

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摘要

A simple phosphorus doping technique for shallow junctions is presented. The low pressure doping process was carried out in a single RTP reactor chamber by using a two-step process: a controlled adsorption of phosphorus on the silicon surface and a rapid thermal diffusion in an oxidising ambient without the deposition of an oxide capping layer. A low concentration of 50 vpm phosphine diluted in hydrogen allowed a sufficient phosphorus supply while the deposition of phosphorus on the reactor walls was insignificant. The phosphine decomposed on the clean silicon surface at a temperature of 550℃, at which the silicon surface is saturated by the adsorbed phosphorus. The shallow junctions were defined by successive rapid thermal annealing at temperatures above the adsorption temperature. An oxygen pressure of 4.2 x 10~3 Pa during the annealing prevented the phosphorus from desorption. Therefore, a deposition of an additional oxide-capping layer was not necessary, allowing more simple processing. This doping method provides shallow junctions of depths below 100nm with sheet resistances below 1000 Ω/sq.
机译：提出了一种用于浅结的简单磷掺杂技术。低压掺杂过程是通过使用两步过程在单个RTP反应器腔室中进行的：磷在硅表面上的受控吸附以及在氧化环境中的快速热扩散，而无需沉积氧化物覆盖层。在氢气中稀释的低浓度50 vpm膦可以提供足够的磷，而磷在反应器壁上的沉积微不足道。磷化氢在550℃的温度下在干净的硅表面上分解，在该温度下，硅表面被吸附的磷饱和。通过在高于吸附温度的温度下连续快速热退火来定义浅结。退火期间的氧气压力为4.2 x 10〜3 Pa，可防止磷解吸。因此，不需要额外的氧化物覆盖层的沉积，从而允许更简单的处理。这种掺杂方法可提供深度低于100nm的浅结，且薄层电阻低于1000Ω/ sq。

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