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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles
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The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

机译：硅间隙在高浓度硼轮廓失活和再活化中的作用

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Boron cluster formation and dissolution in high concentration B profiles and the role of Si interstitials in these processes are analyzed by kinetic non-lattice Monte Carlo atomistic simulations. For this purpose, we use theoretical structures as simplifications of boron implants into preamorphized Si, followed by low-temperature solid phase epitaxial (SPE) regrowth or laser thermal annealing process. We observe that in the presence of high B concentrations (above 10~(20) cm~(-3)), significant deactivation occurs during high temperature anneal, even in the presence of only equilibrium Si interstitials. The presence of additional Si interstitials from an end of range (EOR) damage region accelerates the deactivation process and makes B deactivation slightly higher. We show that B deactivation and reactivation processes can be clearly correlated to the evolution of Si interstitial defects at the EOR. The minimum level of activation occurs when the Si interstitial defects at EOR dissolve or form very stable defects.
机译：通过动力学非晶格蒙特卡罗原子模拟分析了高浓度B分布中硼团簇的形成和溶解以及Si间隙在这些过程中的作用。为此，我们使用理论结构来简化向预先非晶化的Si中注入硼的过程，然后进行低温固相外延（SPE）再生长或激光热退火工艺。我们观察到，在高B浓度（高于10〜（20）cm〜（-3））的存在下，即使仅存在平衡的Si间隙，高温退火过程中也会发生明显的失活。距离末端（EOR）损坏区域的附加Si间隙的存在加速了钝化过程，并使B钝化程度更高。我们表明，B失活和再激活过程可以清楚地与EOR处的Si间隙缺陷的演化相关。当EOR处的Si间隙缺陷溶解或形成非常稳定的缺陷时，将发生最低程度的激活。

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