Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si_(1-x)Ge_x dual source structure

Ming Zhu; Peng Chen; Ricky K.Y. Fu; Weili Liu; Chenglu Lin; Paul K. Chu

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Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si_(1-x)Ge_x dual source structure

机译：使用Si_（1-x）Ge_x双源结构抑制部分耗尽的SOI MOSFET浮体效应的仿真

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摘要

The effect of the Si_(1-x)Ge_x source with an underlying p~+ region on the suppression of the floating body effects in a partially depleted silicon-on-insulator (SOI) metal oxide silicon field effect transistor (MOSFET) is numerically investigated. Compared to a conventional SOI MOSFET, the kink effect and anomalous sub-threshold slope are reduced and the breakdown voltage is substantially increased. The detailed suppression mechanism is also studied. Our results suggest that the narrow bandgap Si_(1-x)Ge__x source and buried p~+ region are favorable to the dispersion of holes generated by impact ionization.

机译：从数字上看，Si_（1-x）Ge_x源具有下面的p〜+区对绝缘体上部分耗尽的SOI金属氧化物硅场效应晶体管（MOSFET）中浮体效应的抑制作用调查。与传统的SOI MOSFET相比，扭结效应和异常的亚阈值斜率降低了，击穿电压也大大提高了。还研究了详细的抑制机制。我们的结果表明，窄带隙Si_（1-x）Ge__x源和掩埋的p〜+区有利于碰撞电离产生的空穴的分散。

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《Materials Science and Engineering. B, Solid-State Materials for Advanced Technology》 |2004年第12期|p.264-268|共5页
作者
Ming Zhu; Peng Chen; Ricky K.Y. Fu; Weili Liu; Chenglu Lin; Paul K. Chu;
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作者单位

Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;

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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
partially depleted SOI MOSFET; floating body effect; bandgap narrowing; impact ionization;

机译：部分耗尽的SOI MOSFET;浮体效应;带隙变窄;冲击电离;

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专利

1. Suppression of the floating-body effect in partially-depleted SOI MOSFETs with SiGe source structure and its mechanism [J] . Nishiyama A., Arisumi O. IEEE Transactions on Electron Devices . 1997,第12期

机译：具有SiGe源极结构的部分耗尽SOI MOSFET的浮体效应抑制及其机理
2. Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs [J] . Jing Chen, Jiexin Luo, Qingqing Wu, Nuclear Instruments & Methods in Physics Research . 2012,第Feba1期

机译：额外的源极注入可抑制部分耗尽的SOI MOSFET中的浮体效应
3. Novel partially depleted SOI MOSFET for suppression floating-body effect: An embedded JFET structure [J] . Ali A. Orouji, Abdollah Abbasi Superlattices and microstructures . 2012,第3期

机译：用于抑制浮体效应的新型部分耗尽型SOI MOSFET：嵌入式JFET结构
4. Mechanism of the suppression of the floating-body effect for SOI MOSFETs with SiGe source structure [C] . Nishiyama, A., Arisumi, . 1996

机译：具有SiGe源极结构的SOI MOSFET的浮体效应抑制机理
5. Area efficient body contact for partially depleted silicon-on-insulator (SOI) MOSFETs. [D] . Daghighi, Arash. 2004

机译：适用于部分耗尽型绝缘体上硅（SOI）MOSFET的面积有效体接触。
6. Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor [O] . Chankeun Yoon, Seungjun Moon, Changhwan Shin -1

机译：FinFET和带铁电电容器的全耗尽绝缘体上硅（FDSOI）MOSFET的磁滞窗口研究
7. A Physically Based Compact Model of Partially Depleted SOI MOSFETs for Analog Circuit Simulation [O] . Mike S. L. Lee, Bernard M. Tenbroek, William Redman-white, 2015

机译：用于模拟电路仿真的基于物理的部分耗尽sOI mOsFET的紧凑模型
8. Photoresponse Model for Si_(1-x)Ge_x/Si Heterojunction Internal Photoemission Infrared Detector [R] . Lin, T., Park, J. S., Gunapala, S. D., 1993

机译：si_（1-x）Ge_x / si异质结内部光电发射红外探测器的光响应模型

Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si_(1-x)Ge_x dual source structure

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