Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes

A. Poyai; I. Rittaporn; E. Simoen; C. Claeys; R. Rooyackers

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Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes

机译：浅沟槽隔离尺寸对高级p-n结二极管的泄漏电流和掺杂浓度的影响

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This paper describes the impact of active area and shallow trench isolation (STI) width on the junction leakage current and doping concentration. A higher junction leakage current is found for a narrower active area and STI width. This is mainly due to a higher compressive stress. This compressive stress also affects the doping concentration near the junction. A higher compressive stress when reduce active area width causes a higher doping concentration while a higher compressive stress when reduce STI width results in a lower doping concentration.

机译：本文描述了有源区和浅沟槽隔离（STI）宽度对结漏电流和掺杂浓度的影响。对于较窄的有源区和STI宽度，发现有较高的结漏电流。这主要是由于较高的压应力。该压应力还影响结附近的掺杂浓度。当减小有源区宽度时，较高的压应力导致较高的掺杂浓度，而当减小STI宽度时，较高的压应力导致较低的掺杂浓度。

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来源
《Materials Science and Engineering. B, Solid-State Materials for Advanced Technology》 |2004年第12期|p.372-375|共4页
作者
A. Poyai; I. Rittaporn; E. Simoen; C. Claeys; R. Rooyackers;
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作者单位

TMEC, 51/4 Moo 1, Wang-Takien District, Amphur Muang, Chachoengsao 24000, Thailand;

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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
shallow trench isolation; leakage current; doping concentration; stress;

机译：浅沟槽隔离;漏电流;掺杂浓度;应力;

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专利

1. Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 /spl mu/m SiGe BiCMOS technology [J] . Guofu Niu, Mathew S.J. IEEE Transactions on Nuclear Science . 1999,第6期

机译：0.35 / spl mu / m SiGe BiCMOS技术中的总剂量对浅沟槽隔离漏电流特性的影响
2. Junction leakage characteristics of shallow trench isolation (STI) with nitrogen pile-up sidewall oxide [J] . Myeong Won Lee, In Man Kang, Byung Yong Choi, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2003,第162期

机译：氮堆积侧壁氧化物的浅沟槽隔离（STI）的结泄漏特性
3. Junction leakage characteristics of shallow trench isolation (STI) with nitrogen pile-up sidewall oxide [J] . Myeong Won Lee, In Man Kang, Byung Yong Choi, 電子情報通信学会技術研究報告. 電子デバイス. Electron Devices . 2003,第159期

机译：氮堆积侧壁氧化物的浅沟槽隔离（STI）的结泄漏特性
4. Impact Of Trench Sidewall Interface Trap In Shallow Trench Isolation On Junction Leakage Current Characteristics For Sub-0.25 /spl mu/m CMOS Devices [C] . Inaba, S., Takahashi, . 2001

机译：低于0.25 / splμm/ m CMOS器件的浅沟槽隔离中的沟槽侧壁界面陷阱对结漏电流特性的影响
5. Shallow-trench-isolation bounded single-photon avalanche diodes in commercial deep submicron CMOS technologies. [D] . Finkelstein, Hod. 2007

机译：商用深亚微米CMOS技术中的浅沟槽隔离边界单光子雪崩二极管。
6. Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping [O] . Gangqiang Dong, Fengzhen Liu, Jing Liu, 2013

机译：基于低温浅磷掺杂的径向p-n结硅纳米线太阳能电池的实现
7. Speckle Defect by Dark Leakage Current in Nitride Stringer at the Edge of Shallow Trench Isolation for CMOS Image Sensors [O] . Woo-yang Jeong, Keun-man Yi 2009

机译：CmOs图像传感器浅沟槽隔离边缘氮化物纵梁暗漏电流斑点缺陷
8. Junction Capacitance as a Function of Voltage for Diffused p-n Diodes with Exponential Doping Gradients [R] . Been, J. F., Myers, I. T. 1971

机译：具有指数掺杂梯度的扩散p-n二极管的结电容作为电压的函数

Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes

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