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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Studies on structural and electrical properties of spray deposited SnO_2:F thin films as a function of film thickness
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Studies on structural and electrical properties of spray deposited SnO_2:F thin films as a function of film thickness

机译：喷涂沉积的SnO_2：F薄膜的结构和电性能与膜厚的关系研究

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摘要

Thin films of fluorine-doped tin oxide (SnO_2:F) on glass were prepared by spray pyrolysis technique from an economic stannous chloride (SnCl_2) precursor. In order to find out the effect of solution concentration on growth of the films, these films were prepared using different precursor concentrations. In the present paper we report the thickness dependent properties of SnO_2:F films. X-ray diffraction (XRD) studies revealed that the preferred orientation of the films varies with the film thickness and are reflected in scanning electron microscope (SEM) studies as they showed different grain shapes. The minimum sheet resistance (3.2 Ω/□) achieved in the present study was found to be the lowest among the earlier reported values for these films prepared from SnCl_2 precursor. The possibility of various scattering mechanisms as to be a dominant factor in limiting the mobility of charge carriers has been analysed.
机译：通过喷雾热解技术从经济的氯化亚锡（SnCl_2）前体制备玻璃上的掺氟氧化锡（SnO_2：F）薄膜。为了找出溶液浓度对膜生长的影响，使用不同的前体浓度制备这些膜。在本文中，我们报道了SnO_2：F薄膜的厚度依赖性。 X射线衍射（XRD）研究表明，薄膜的首选取向随薄膜厚度的变化而变化，并且由于扫描电子显微镜（SEM）显示出不同的晶粒形状而被反映出来。对于由SnCl_2前体制备的这些薄膜，发现在本研究中获得的最小薄层电阻（3.2Ω/□）在较早报道的值中是最低的。已经分析了各种散射机制成为限制电荷载流子迁移率的主要因素的可能性。

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