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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >DLTS properties of iron defects in crystalline silicon used in solar cells
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DLTS properties of iron defects in crystalline silicon used in solar cells

机译：太阳能电池用结晶硅中铁缺陷的DLTS特性

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Crystalline silicon used in solar cells has been investigated using deep level transient spectroscopy (DLTS). In majority-carrier pulse sequence an interstitial iron deep level was observed. However, the investigation of this deep level peak with different filling pulsewidths shows that this level consists of two superimposed levels. The activation energies of these levels are 375 meV (F_1) and 480 meV (F_2). The capture cross section of the level (F_1) with the lower activation energy is nearly two orders of magnitude larger than the capture cross section of defect F_2. Both capture cross sections show, over a wide range, no temperature dependence indicating that nonradiative recombination mechanisms other than multiphonon emission are involved. The concentration ratio between both defects is nearly 1:2.
机译：太阳能电池中使用的结晶硅已使用深层瞬态光谱法（DLTS）进行了研究。在多数载流子脉冲序列中，观察到间隙铁深能级。但是，对具有不同填充脉冲宽度的深能级峰的研究表明，该能级由两个叠加能级组成。这些能级的活化能为375 meV（F_1）和480 meV（F_2）。具有较低活化能的能级（F_1）的捕获截面比缺陷F_2的捕获截面大将近两个数量级。两个俘获截面均在很宽的范围内显示出与温度无关，这表明除多声子发射外还涉及非辐射重组机制。两种缺陷之间的浓度比接近1：2。

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