Microstructural evolution of high quality AlN grown by PAMBE under different growth conditions

Aggarwal Neha; Krishna Shibin; Jain Shubhendra Kumar; Mishra Monu; Maurya K. K.; Singh Sandeep; Kaur Mandeep; Gupta Govind

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Microstructural evolution of high quality AlN grown by PAMBE under different growth conditions

机译：PAMBE在不同生长条件下高品质ALN的微观结构演变

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The morphological evolution of AlN microstructures by varying the growth temperature and Al/N flux ratio on Si (111) substrate via plasma-assisted molecular beam epitaxy has been investigated. The transformations in microstructures of AlN grown along the c-plane were explored as a function of N-2-flow rate, growth temperature and Al-flux. The structural analysis carried out using high resolution X-ray diffraction reveals single crystalline quality with reduced full widths at half maximum value of 15 arcmin corresponding to a screw dislocation density of 8.5 x 10(8) cm(-2). The topographical study of AlN grown by modulating growth conditions revealed an average surface roughness of 6.9 nm. It was exemplified that interplay between higher growth temperature and nitrogen flow rate is desired to prevent condensation of metallic Al on the surface. Also, the AlN pertaining less screw dislocation density leads to lower dark current which can be fruitful for various optoelectronic applications like vacuum-UV photodetectors.

机译：研究了通过等离子体辅助分子束外延改变Si（111）衬底上的生长温度和Al / N焊剂比的AlN微观结构的形态学演变。沿着C平面生长的ALN的微观结构的转化被探索为N-2流速，生长温度和Al-助熔剂的函数。使用高分辨率X射线衍射进行的结构分析显示出单晶质量，在与螺杆位错密度为8.5×10（8）厘米（-2）的螺杆位错密度的半个最大值下，具有减小的全宽度。通过调节生长条件生长的ALN的地形研究显示了6.9nm的平均表面粗糙度。举例说明希望在较高的生长温度和氮流速之间的相互作用以防止表面上金属Al的冷凝。此外，螺丝脱位密度较少的ALN导致较低的暗电流，这对于真空-UV光电探测器等各种光电应用可以是富有成效的。

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来源
《Materials Science and Engineering》 |2019年第4期|71-77|共7页
作者
Aggarwal Neha; Krishna Shibin; Jain Shubhendra Kumar; Mishra Monu; Maurya K. K.; Singh Sandeep; Kaur Mandeep; Gupta Govind;
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作者单位

CSIR NPL Dr KS Krishnan Rd New Delhi 110012 India|CSIR Acad Sci & Innovat Res NPL Campus Dr KS Krishnan Rd New Delhi 110012 India;

CSIR NPL Dr KS Krishnan Rd New Delhi 110012 India|CSIR Acad Sci & Innovat Res NPL Campus Dr KS Krishnan Rd New Delhi 110012 India;

CSIR NPL Dr KS Krishnan Rd New Delhi 110012 India|CSIR Acad Sci & Innovat Res NPL Campus Dr KS Krishnan Rd New Delhi 110012 India;

CSIR NPL Dr KS Krishnan Rd New Delhi 110012 India|CSIR Acad Sci & Innovat Res NPL Campus Dr KS Krishnan Rd New Delhi 110012 India;

CSIR NPL Dr KS Krishnan Rd New Delhi 110012 India;

CSIR NPL Dr KS Krishnan Rd New Delhi 110012 India;

CSIR NPL Dr KS Krishnan Rd New Delhi 110012 India;

CSIR NPL Dr KS Krishnan Rd New Delhi 110012 India|CSIR Acad Sci & Innovat Res NPL Campus Dr KS Krishnan Rd New Delhi 110012 India;

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正文语种 eng
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关键词
AlN; Epitaxial growth; Microstructures; MBE; Screw dislocations; Si Substrate;

机译：ALN;外延生长;微观结构;MBE;螺杆脱位;SI衬底;

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专利

1. Microstructural evolution of high quality AlN grown by PAMBE under different growth conditions [J] . Aggarwal Neha, Krishna Shibin, Jain Shubhendra Kumar, Materials Science and Engineering . 2019,第APRa期

机译：PAMBE在不同生长条件下生长的高质量AlN的组织演变
2. Growth mechanisms in semipolar (2 0 2 1) and nonpolar m-plane (1 0 1 0) AlGaN/GaN structures grown by PAMBE under N-rich conditions [J] . M. Sawicka, C. Cheze, H. Turski, Journal of Crystal Growth . 2013,第auga15期

机译：富氮条件下PAMBE在半极性（2 0 2 1）和非极性m平面（1 0 1 0）AlGaN / GaN结构中的生长机理
3. Influence of AlN Growth Conditions on the Polarity of GaN Grown on AlN/Si(111) by Metalorganic Molecular Beam Epitaxy [J] . Kimiaki YAMAGUCHI, Hiroyuki TOMIOKA, Tomonari SATO, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第2A期

机译：AlN生长条件对金属有机分子束外延生长在AlN / Si（111）上的GaN极性的影响
4. Impact of SiC surface control on initial growth mode and crystalline quality of AlN grown by molecular-beam epitaxy [C] . N. Onojima, J. Suda, T. Kimoto, International conference on nitride semiconductors . 2003

机译：SiC表面控制对分子束外延生长的初始生长模式和晶体质量的影响
5. Damage and microstructural change in laboratory-grown ice under high-pressure zone conditions [D] . Melanson, Paul M. 1998

机译：高压区条件下实验室生长的冰的破坏和微结构变化
6. Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions [O] . Ya Wang, Zhiming Liao, Hongyi Xu, 2011

机译：不同生长条件下分子束外延生长GeMn / Ge超晶格的结构演变
7. Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy [O] . Masayoshi Adachi, Ryuta Sekiya, Hiroyuki Fukuyama 2017

机译：GA-Al液相外延生长生长条件对AlN层的影响

Microstructural evolution of high quality AlN grown by PAMBE under different growth conditions

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