Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate

Matthew Whiteside; Subramaniam Arulkumaran; Geok Ing Ng

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Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate

机译：Si衬底上的垂直有序的H-BN / AlGaN / GaN金属 - 绝缘体 - 半导体高电子迁移率晶体管的示范

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摘要

AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) have been demon-strated with 22 nm thick vertically ordered (VO) h-BN by high-power impulse magnetron sputtering deposited at room temperature for the first time. About two orders of magnitude lower gate leakage current was observed in VO h-BN/AlGaN/GaN MIS-diodes compared to conventional Schottky diodes. The fabricated MISHEMT and HEMT with 2 μm gate-length exhibited a maximum drain current density (I_(Dmax)) of 685 and 467 mA/mm and a maximum extrinsic transconductance (g_(mmax)) of 93 and 134 mS/mm, respectively. The VO h-BN/AlGaN/GaN MISHEMT with improved characteristics is due to an enhanced sheet carrier density (from 7.29 × 10~(12) cm~(-2) to 1.10 × 10~(13) cm~(-2)) by surface passivation of VO h-BN as well as the good VO h-BN/GaN interface quality with a minimum interface state density of 2.6 × 10~(12) cm~(-2)eV~(-1).

机译：AlGaN / GaN金属 - 绝缘体 - 半导体高电子迁移率晶体管（Mishemts）已经通过在第一次在室温下沉积的高功率脉冲磁控管溅射，用22nm厚的垂直有序（Vo）H-Bn进行垂直有序（Vo）H-Bn。与传统的肖特基二极管相比，在VO H-BN / AlGaN / GaN MIS-误区中观察到大约两个幅度漏电流。具有2μm栅极长度的制造的Mishemt和Hemt，分别显示出685和467mA / mm的最大漏极电流密度（I_（dmax））和93和134ms / mm的最大外部跨导（G_（mmax））。具有改进的特性的VO H-BN / AlGaN / GaN Mishemt是由于增强的纸张载体密度（从7.29×10〜（12）cm〜（-2）至1.10×10〜（13）cm〜（-2）通过VO H-BN的表面钝化以及良好的VO H-BN / GAN接口质量，最小界面状态密度为2.6×10〜（12）cm〜（-2）eV〜（-1）。

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来源
《Materials Science and Engineering》 |2021年第8期|115224.1-115224.5|共5页
作者
Matthew Whiteside; Subramaniam Arulkumaran; Geok Ing Ng;
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作者单位

School of EEE Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore;

Temasek Laboratories@NTU Nanyang Technological University Research Techno Plaza 50 Nanyang Drive Singapore 637553 Singapore;

School of EEE Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore Temasek Laboratories@NTU Nanyang Technological University Research Techno Plaza 50 Nanyang Drive Singapore 637553 Singapore;

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正文语种 eng
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关键词
HiPIMS; h-BN; AlGaN/GaN; MISHEMT; Interface state density; Conductance-frequency;

机译：Hipims;H-BN;Algan / Gan;Mishemt;界面状态密度;电导频率;

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1. N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching [J] . Prasertsuk Kiattiwut, Tanikawa Tomoyuki, Kimura Takeshi, Applied physics express . 2018,第1期

机译：在蓝宝石衬底上形成的N极GaN / AlGaN / GaN金属绝缘体半导体高电子迁移率晶体管具有最小的台阶束
2. Mechanical tensile strain for AlGan/GaN metal-insulator-semiconductor high-electron-mobility transistors on a silicon-on-insulator substrate [J] . Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2020,第期

机译：用于硅与绝缘体上的AlGaN / GaN金属 - 绝缘体 - 半导体高电子迁移率晶体管的机械拉伸应变
3. AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor on 4 in. silicon substrate for high breakdown characteristics [J] . S. Lawrence Selvaraj, Tsuneo Ito, Yutaka Terada, Applied Physics Letters . 2007,第17期

机译：在4英寸硅衬底上具有高击穿特性的AlN / AlGaN / GaN金属绝缘体半导体高电子迁移率晶体管
4. Low interface trap density in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on CVD-Diamond [C] . K. Ranjan, S. Arulkumaran, G. I. Ng, IEEE Electron Devices Technology and Manufacturing Conference . 2020

机译：CVD金刚石上的AlGaN / GaN金属-绝缘体-半导体高电子迁移率晶体管中的界面陷阱密度低
5. Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors. [D] . Ha, Minh-Trang Teresa. 2016

机译：在AlGaN / GaN高电子迁移率晶体管上进行等离子增强化学气相沉积的氮化硅钝化的热稳定性。
6. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors [O] . Huan-Yu Shih, Fu-Chuan Chu, Atanu Das, 2016

机译：AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
7. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors [O] . Wu Tian-Li, Marcon Denis, Bakeroot Benoit, 2015

机译：alGaN / GaN金属 - 绝缘体 - 半导体高电子迁移率晶体管的界面态/边界陷阱与阈值电压漂移的相关性

Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate

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