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Low-temperature plasma processing for Si photovoltaics

机译:硅光伏电池的低温等离子体处理

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摘要

There has been a recent rapid expansion of the range of applications of low-temperature plasma processing in Si-based photovoltaic (PV) technologies. The desire to produce Si-based PV materials at an acceptable cost with consistent performance and reproducibility has stimulated a large number of major research and research infrastructure programs, and a rapidly increasing number of publications in the field of low-temperature plasma processing for Si photovoltaics. In this article, we introduce the low-temperature plasma sources for Si photovoltaic applications and discuss the effects of low-temperature plasma dissociation and deposition on the synthesis of Si-based thin films. We also examine the relevant growth mechanisms and plasma diagnostics, Si thin-film solar cells, Si heterojunction solar cells and silicon nitride materials for antireflection and surface passivation. Special attention is paid to the low-temperature plasma interactions with Si materials including hydrogen interaction, wafer cleaning, masked or mask-free surface texturization, the direct formation of p-n junction, and removal of phosphorus silicate glass or parasitic emitters. The chemical and physical interactions in such plasmas with Si surfaces are analyzed. Several examples of the plasma processes and techniques are selected to represent a variety of applications aimed at the improvement of Si-based solar cell performance.
机译:最近,基于硅的光伏(PV)技术中低温等离子体处理的应用范围迅速扩大。以可接受的成本生产具有稳定性能和可重复性的硅基光伏材料的愿望刺激了许多主要的研究和研究基础设施计划,并且在用于硅光伏的低温等离子体处理领域的出版物迅速增加。在本文中,我们介绍了用于Si光伏应用的低温等离子体源,并讨论了低温等离子体离解和沉积对Si基薄膜合成的影响。我们还研究了相关的生长机制和等离子体诊断,Si薄膜太阳能电池,Si异质结太阳能电池和氮化硅材料的抗反射和表面钝化作用。特别注意与硅材料的低温等离子体相互作用,包括氢相互作用,晶圆清洗,经掩膜或无掩膜的表面纹理化,直接形成p-n结以及去除硅酸磷玻璃或寄生发射极。分析了此类等离子体与Si表面的化学和物理相互作用。选择等离子体工艺和技术的几个示例以代表旨在改善基于硅的太阳能电池性能的各种应用。

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