Low-Temperature Plasma Deposition of Diamond-like Carbon and III Nitride Thin-Films for Photovoltaic Devices

机译：用于光伏器件的类金刚石碳和三氮化三氮薄膜的低温等离子体沉积

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Low-temperature plasma deposition of diamond-like carbon (DLC) and gallium nitride thin-films grown on Si substrate by PECVD was investigated using atomic force microscopy and reflectance spectra for photovoltaic devices application. It was found that the morphological features of the GaN film depend on the substrates under the optimum deposition conditions. The optical band gap of the films was approximately 5.5eV for PECVD DLC and approximately 3.3 eV for PECVD GaN.

机译：利用原子力显微镜和反射光谱研究了在PE衬底上通过PECVD在Si衬底上生长的类金刚石碳（DLC）和氮化镓薄膜的低温等离子体沉积。发现在最佳沉积条件下，GaN膜的形态特征取决于衬底。对于PECVD DLC，薄膜的光学带隙约为5.5eV，对于PECVD GaN，薄膜的光学带隙约为3.3eV。

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《Materials Research : Eco/enviromental materials, energy materials, magnesium, aerospace materials and biomaterials for medical application》|2009年|353-356|共4页
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Jinshe YUAN; Mingyue WANG; Guohao YU;
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中图分类工程材料一般性问题;
关键词
PECVD; GaN; DLC;

机译：PECVD;氮化镓; DLC;

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专利

1. Thin-film Deposition Of Silicon-incorporated Diamond-like Carbon By Plasma-enhanced Chemical Vapor Deposition Using Monomethylsilane As A Silicon Source [J] . Hideki Nakazawa, Yuhki Asai, Takeshi Kinoshita, Japanese journal of applied physics . 2008,第11期

机译：以单甲基硅烷为硅源的等离子体化学气相沉积薄膜沉积硅结合的类金刚石碳
2. Evolution of optical properties with deposition time of silicon nitride and diamond-like carbon films deposited by radio-frequency plasma-enhanced chemical vapor deposition method [J] . Mateusz Smietana, Wojtek J. Bock, Jan Szmidt Thin Solid Films . 2011,第19期

机译：射频等离子体增强化学气相沉积法沉积氮化硅和类金刚石碳膜的光学性能随沉积时间的变化
3. Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices [J] . Mai Lukas, Zanders David, Subasi Ersoy, ACS applied materials & interfaces . 2019,第3期

机译：从官能化烷基前体的低温等离子体增强原子层沉积锡（IV）氧化物：基于SnO2的薄膜晶体管器件的制造和评估
4. PLASMA DEPOSITION OF DIAMOND-LIKE CARBON AND CARBON-NITRIDE FILMS IN AN ELECTRON CYCLOTRON RESONANCE-RADIO FREQUENCY DISCHARGE [C] . Symposium on plasma deposition and treatment of polymers . 1999

机译：在电子回旋共振射频放电中的等离子体沉积金刚石碳和碳 - 氮化物膜
5. The pulsed laser deposition of copper oxide, cobalt(II)oxide, cobalt(III)oxide, diamond-like carbon, gallium nitride, aluminum nitride, and indium nitride thin films. [D] . Feiler, David. 1996

机译：脉冲激光沉积氧化铜，氧化钴（II），氧化钴（III），类金刚石碳，氮化镓，氮化铝和氮化铟薄膜。
6. Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source [O] . Ki Seok Kim, Ki Hyun Kim, You Jin Ji, -1

机译：使用多层推挽式等离子体源的VHF（162 MHz）-PECVD用于柔性有机电子设备的氮化硅沉积
7. Low-Temperature Plasma Deposition of Diamond-like Carbon and III Nitride Thin-Films for Photovoltaic Devices [O] . Jinshe Yuan 2015

机译：用于光伏器件的类金刚石碳和氮化物薄膜的低温等离子体沉积

Low-Temperature Plasma Deposition of Diamond-like Carbon and III Nitride Thin-Films for Photovoltaic Devices

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