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Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

机译：电阻式随机存取存储器的最新进展：材料，切换机制和性能

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摘要

This review article attempts to provide a comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs). First, a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMs over the past decade. Second, both inorganic and organic materials used in RRAMs are summarized, and their respective advantages and shortcomings are discussed. Third, the important switching mechanisms are discussed in depth and are classified into ion migration, charge trapping/de-trapping, thermochemical reaction, exclusive mechanisms in inorganics, and exclusive mechanisms in organics. Fourth, attention is given to the application of RRAMs for data storage, including their current performance, methods for performance enhancement, sneak-path issue and possible solutions, and demonstrations of 2-D and 3-D crossbar arrays. Fifth, prospective applications of RRAMs in unconventional computing, as well as logic devices and multi-functionalization of RRAMs, are comprehensively summarized and thoroughly discussed. The present review article ends with a short discussion concerning the challenges and future prospects of the RRAMs.
机译：本文旨在提供对所谓的电阻式随机存取存储器（RRAM）的最新进展的全面综述。首先，简要介绍了RRAM的构造和开发，它们在非易失性存储器，非常规计算和逻辑设备领域的广泛应用的潜力以及过去十年中有关RRAM的研究重点。其次，总结了RRAM中使用的无机材料和有机材料，并讨论了它们各自的优点和缺点。第三，深入讨论了重要的开关机制，并将其分为离子迁移，电荷捕集/去捕集，热化学反应，无机物的排他性机理和有机物的排他性机理。第四，关注RRAM在数据存储中的应用，包括RRAM的当前性能，性能增强方法，临时路径问题和可能的解决方案以及2-D和3-D交叉开关阵列的演示。第五，对RRAM在非常规计算中的预期应用以及RRAM的逻辑器件和多功能化进行了全面总结和透彻讨论。本评论文章以关于RRAM的挑战和未来前景的简短讨论结尾。

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  • 来源
    《Materials Science & Engineering》 |2014年第9期|1-59|共59页
  • 作者

    F. Pan; S. Gao; C. Chen; C. Song; F. Zeng;

  • 作者单位

    Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, PR China;

    Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, PR China;

    Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, PR China;

    Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, PR China;

    Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, PR China;

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  • 正文语种 eng
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  • 关键词

    Resistive switching; Resistive random access memory; Nonvolatile memory; Memristor; Organic resistive memory;

    机译：电阻开关;电阻式随机存取存储器;非易失性存储器;忆阻器有机电阻式记忆;

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