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Adhesion Properties of Thin Film Multilayers: Comparison of Nanoindentation and Four-Point-Bending Techniques

机译:薄膜多层的粘合性能:纳米茚和四点弯曲技术的比较

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摘要

In this study, we investigated the adhesion strength of SiO_2/SiN/TiW/Cu film stacks on silicon by the use of cross-sectional nanoindentation (CSN) technique. The delamination occurred along the SiN/TiW interface as determined by means of SEM and EDX analysis. The critical energy release rate was determined as a quantitative measure of the adhesion strength by application of analytical models as well as Finite Element Method (FEM). Comparative measurements on samples of the same layer composition using the well-established four-point bending (4PB) technique were performed to validate the results of the CSN measurements. FEM was performed to calculate the loading conditions and stress distribution in the samples. The calculations also allowed separating the contribution of plastic and elastic energy in the metallization layers during delamination testing and thereby estimating the value of the interfacial adhesion energy. The experimental results show the good applicability of both the 4PB and CSN method for determining quantitative values of the fracture toughness of thin-film interfaces found in microelectronic components and indicate a good agreement between the two methods.
机译:在这项研究中,我们通过使用横截面纳米狭窄(CSN)技术研究了SiO_2 / SIN / TIW / Cu膜叠层粘合强度的粘附强度。通过SEM和EDX分析确定的SIN / TIW界面发生分层。通过应用分析模型以及有限元方法(FEM),确定临界能量释放速率作为粘合强度的定量测量。使用良好建立的四点弯曲(4PB)技术进行相同层组合物的样品的比较测量以验证CSN测量结果。进行有限元以计算样品中的负载条件和应力分布。计算还允许在分层测试期间分离金属化层中的塑料和弹性能量的贡献,从而估计界面粘附能量的值。实验结果表明,4PB和CSN方法的良好适用性,用于确定微电子组件中发现的薄膜界面的断裂韧性的定量值,并在两种方法之间表明良好的一致性。

著录项

  • 来源
    《Materials science forum》 |2021年第2期|1561-1568|共8页
  • 作者单位

    Christian Doppler Laboratory for Lifetime and Reliability of Interfaces in Complex Multi-Material Electronics CTA TU Wien Getreidemarkt 9/164 1060 Vienna Austria;

    Christian Doppler Laboratory for Lifetime and Reliability of Interfaces in Complex Multi-Material Electronics CTA TU Wien Getreidemarkt 9/164 1060 Vienna Austria;

    Christian Doppler Laboratory for Lifetime and Reliability of Interfaces in Complex Multi-Material Electronics CTA TU Wien Getreidemarkt 9/164 1060 Vienna Austria;

    Institute of Chemical Technologies and Analytics TU Wien Getreidemarkt 9/164 1060 Vienna Austria;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    thin films; delamination; nanoindentation; four-point bending;

    机译:薄膜;分层;纳米intentation;四点弯曲;

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