Qualitative Simulation of the Growth of Electrolessly Deposited Cu Thin Films

Hsiu-Chuan Wei

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Qualitative Simulation of the Growth of Electrolessly Deposited Cu Thin Films

机译：化学沉积铜薄膜生长的定性模拟

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Electroless deposition for fabricating copper (Cu) interconnects of integrated circuits has drawn attention due to its low processing temperature, high deposition selectivity, and high coverage. In this paper, three-dimensional computer simulations of the qualitative growth properties of Cu particles and two-dimensional simulations of the trench-filling properties are conducted. The mathematical model employed in the study is a reaction-diffusion equation. An implicit finite difference discretization with a red-black Gauss-Seidel method as a solver is proposed for solving the reaction-diffusion equation. The simulated deposition properties agree with those observed in experimentation. Alternatives to improve the deposition properties are also discussed.

机译：由于其低的处理温度，高的沉积选择性和高的覆盖率，用于制造集成电路的铜（Cu）互连的化学沉积引起了人们的关注。在本文中，对铜粒子的定性生长特性进行了三维计算机模拟，并对沟槽填充特性进行了二维模拟。该研究中使用的数学模型是反应扩散方程。为了解决反应扩散方程，提出了一种以红黑高斯-赛德尔法为求解器的隐式有限差分离散化方法。模拟的沉积特性与实验观察到的一致。还讨论了改善沉积性能的替代方法。

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《Mathematical Problems in Engineering》 |2011年第2期|p.1-13|共13页
作者
Hsiu-Chuan Wei;
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作者单位

Department of Applied Mathematics, Feng Chia University, Seatwen, Taichung 40724, Taiwan;

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1. Qualitative Simulation of the Growth of Electrolessly Deposited Cu Thin Films [J] . Hsiu-ChuanWei Mathematical Problems in Engineering: Theory, Methods and Applications . 2011,第2期

机译：化学沉积铜薄膜生长的定性模拟
2. Evaluation of the initial growth of electroless deposited Co(W,P) diffusion barrier thin film for Cu metallization [J] . Zhu A, Shacham-Diamand Y, Teo M International Journal of Quantum Chemistry . 2006,第12期

机译：用于铜金属化的化学沉积Co（W，P）扩散阻挡薄膜的初始生长的评估
3. Growth and Density Time Dependence of Electroless Cu Films Deposited onto Au Using Cu-EDTA-HCHO Bath [J] . N. M. Hasan, S. G. dos Santos Filho, W. Schwarzacher Electrochemical and solid-state letters . 2005,第10期

机译：使用Cu-EDTA-HCHO浴沉积到Au上的化学镀Cu膜的生长和密度随时间的变化
4. THERMODYNAMIC SIMULATION OF GROWTH CONDITIONS OF Cu_2SnS_3 USED AS PRECURSOR OF Cu2ZnSnS4 THIN FILMS DEPOSITED USING A SOLUTION BASED CHEMICAL ROUTE [C] . G Gordillo, J. M. Correa, R A. Becerra European Photovoltaic Solar Energy Conference and Exhibition . 2014

机译：以溶液为基础的化学路线沉积的Cu2ZnSnS4薄膜的前身Cu_2SnS_3的生长条件的热力学模拟
5. X-ray diffraction systems as an advanced materials characterization tool for paleontological specimens, electroless deposited thin films, pozzolanic inorganic composites and electrocoagulation by-products. [D] . Kesmez, Mehmet. 2004

机译：X射线衍射系统是用于古生物学标本，化学沉积薄膜，火山灰无机复合材料和电凝副产物的先进材料表征工具。
6. Sensitive Five-Fold Local Symmetry to Kinetic Energy of Depositing Atoms in Cu-Zr Thin Film Growth [O] . Lu Xie, Haojie An, Qing Peng, 2018

机译：Cu-Zr薄膜生长中沉积原子动能的敏感五折局部对称性。
7. Qualitative Simulation of the Growth of Electrolessly Deposited Cu Thin Films [O] . Hsiu-Chuan Wei 2011

机译：定性沉积Cu薄膜生长的模拟
8. Effect of temperature, growth kinetics, and substrate on the microstructure of RF off-axis sputter deposited YBa(sub 2)Cu(sub 3)O(sub 7) thin films [R] . Hawley, M. , Houlton, R. J. , Garzon, F. H. , 1995

机译：温度，生长动力学和基底对RF轴外溅射沉积YBa（sub 2）Cu（sub 3）O（sub 7）薄膜微观结构的影响

Qualitative Simulation of the Growth of Electrolessly Deposited Cu Thin Films

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