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首页> 外文期刊>Journal of Microelectromechanical Systems >Characterization of Polycrystalline Silicon-Germanium Film Deposition for Modularly Integrated MEMS Applications
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Characterization of Polycrystalline Silicon-Germanium Film Deposition for Modularly Integrated MEMS Applications

机译：模块化集成MEMS应用的多晶硅-锗薄膜沉积特性

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摘要

The deposition of in situ boron-doped polycrystalline silicon-germanium (poly-SiGe) films in a conventional low-pressure chemical-vapor deposition reactor has been characterized using the design of experiments method. The dependencies of deposition rate, resistivity, average residual stress, strain gradient, and wet etch rate in hydrogen peroxide solution are presented. Structural layer requirements for general microelectromechanical system applications can be met within the process temperature constraint imposed by complementary metal-oxide-semiconductor (CMOS) electronics. However, residual stress and strain gradient requirements for inertial sensor applications will be difficult to meet with a single homogeneous layer of poly-SiGe that is about 2 mum thick. By correlating stress depth profile measurements with cross-sectional transmission electron microscopy images, we conclude that the large strain gradient is due to highly compressive stress in the lower (initially deposited) region of the film. For films deposited at very low temperature (near the range of amorphous film deposition), in situ boron doping enhances film crystallinity and reduces the strain gradient
机译：利用实验方法的设计，对传统的低压化学气相沉积反应器中原位掺杂硼的多晶硅锗薄膜进行了表征。介绍了过氧化氢溶液中沉积速率，电阻率，平均残余应力，应变梯度和湿蚀刻速率的依赖性。在互补金属氧化物半导体（CMOS）电子设备施加的工艺温度限制内，可以满足一般微机电系统应用的结构层要求。然而，惯性传感器应用的残余应力和应变梯度要求将难以通过约2微米厚的多晶硅SiGe单层均匀层来满足。通过将应力深度分布测量结果与横截面透射电子显微镜图像相关联，我们得出结论，较大的应变梯度是由于膜下部（初始沉积）区域中的高压缩应力所致。对于在非常低的温度下（接近非晶膜沉积范围）沉积的膜，原位硼掺杂可增强膜的结晶度并降低应变梯度

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