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首页> 外文期刊>Journal of Microelectromechanical Systems >CMOS Compatible Integration of Three-Dimensional Microfluidic Systems Based on Low-Temperature Transfer of SU-8 Films
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CMOS Compatible Integration of Three-Dimensional Microfluidic Systems Based on Low-Temperature Transfer of SU-8 Films

机译：基于SU-8薄膜低温转移的三维微流体系统CMOS兼容集成

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摘要

A novel approach to integrate densely packed CMOS devices with three-dimensional (3-D) microfluidic systems created at the wafer level using low temperature processes is introduced. The approach is based on low temperature (<50℃) bonding and releasing of non-UV-exposed SU-8 films onto a SU-8 structured Si wafer bearing CMOS devices and multilayered lithography in the non-UV-exposed SU-8 films to form 3-D microfluidic structures. The fabrication process assures compatibility with CMOS electronics and has the advantage in realizing complex microfluidic systems comparable in size to CMOS devices, hence holding great promise for large-scale integration between the two. We demonstrate in this paper the integration of more than 800 3-D microchannel systems with giant magnetoresistive (GMR) sensors prefabricated on a 4" Si wafer.
机译：介绍了一种新颖的方法，该方法可将密集封装的CMOS器件与使用低温工艺在晶圆级创建的三维（3-D）微流体系统集成在一起。该方法基于低温（<50℃）粘合和将未暴露于紫外线的SU-8膜释放到带有CMOS器件的SU-8结构化Si晶片上，以及在未暴露于紫外线的SU-8膜中的多层光刻技术。形成3-D微流体结构。该制造工艺确保了与CMOS电子器件的兼容性，并具有实现尺寸可与CMOS器件相媲美的复杂微流体系统的优势，因此为两者之间的大规模集成提供了广阔前景。我们在本文中演示了800多个3-D微通道系统与在4英寸Si晶圆上预制的巨型磁阻（GMR）传感器的集成。

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