Studying the insulating characters of cubic ZrO_2 slabs with nine terminations within three lower index Miller planes (001), (110) and (111)

Zhang Yan; Chen Hua-Xin; Duan Li; Fan Ji-Bin; Ni Lei; Wang Zhuo; Li Hao; Ji Vincent

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Studying the insulating characters of cubic ZrO_2 slabs with nine terminations within three lower index Miller planes (001), (110) and (111)

机译：研究三个较低折射率Miller平面（001），（110）和（111）中具有9个终端的立方ZrO_2平板的绝缘特性

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In this paper, we exam the insulating characters of cubic ZrO2 (c-ZrO2) slabs with various possible terminations within three lower index Miller planes (001), (110) and (111). It is found that, firstly, a shift towards higher energy region makes the valence bands of both the O-terminated slabs of (001) plane and OO-terminated slabs of (111) plane of c-ZrO2 cross the Fermi level (E-F) and thus unusable as a gate dielectric oxide. Second, a new splitting state presented just below the bottom of conduction band and crossed the E-F imply the Zr-terminated slabs of both (001) and (111) planes of c-ZrO2 are also unusable as a gate dielectric oxide. Thirdly, combining above two mechanisms together makes the insulating character disappear completely for Zr + O-terminated slabs of the (001) plane of c-ZrO2 and thus unusable as a gate dielectric oxide. Fourth, the insulating character is maintained for both the ZrO2-terminated slabs of the (110) plane and the O-terminated slabs of the (111) plane of c-ZrO2 and thus usable as a gate dielectric oxide. We hope these theoretical predictions can provide a guide in fabrication and application of ZrO2 gate dielectric material.

机译：在本文中，我们检查了三个较低折射率的米勒平面（001），（110）和（111）中具有各种可能终端的立方ZrO2（c-ZrO2）平板的绝缘特性。发现，首先，向较高能量区域的转变使c-ZrO2的（001）平面的O端板和（111）平面的OO端板的价带都穿过费米能级（EF）因此不能用作栅极介电氧化物。其次，刚好在导带底部下方并穿过E-F的新分裂状态意味着c-ZrO2（001）和（111）面的Zr端接平板也不能用作栅极介电氧化物。第三，将上述两种机理结合在一起，对于c-ZrO2（001）面的Zr + O端接的平板，绝缘特性完全消失，因此不能用作栅极介电氧化物。第四，对于（110）面的ZrO 2端板和（111）面的c-ZrO 2的O端板都保持绝缘特性，因此可用作栅极电介质氧化物。我们希望这些理论预测能够为ZrO2栅极介电材料的制造和应用提供指导。

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来源
《Microelectronic Engineering》 |2019年第5期|77-85|共9页
作者
Zhang Yan; Chen Hua-Xin; Duan Li; Fan Ji-Bin; Ni Lei; Wang Zhuo; Li Hao; Ji Vincent;
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作者单位

Changan Univ, Sch Mat Sci & Engn, Xian 710061, Shaanxi, Peoples R China;

Changan Univ, Sch Mat Sci & Engn, Xian 710061, Shaanxi, Peoples R China;

Changan Univ, Sch Mat Sci & Engn, Xian 710061, Shaanxi, Peoples R China;

Changan Univ, Sch Mat Sci & Engn, Xian 710061, Shaanxi, Peoples R China;

Changan Univ, Sch Mat Sci & Engn, Xian 710061, Shaanxi, Peoples R China;

Changan Univ, Sch Mat Sci & Engn, Xian 710061, Shaanxi, Peoples R China;

Changan Univ, Sch Mat Sci & Engn, Xian 710061, Shaanxi, Peoples R China;

Univ Paris Sud, ICMMO SP2M, UMR CNRS 8182, F-91405 Orsay, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
ZrO2; Slabs; Integrated-circuit (IC) industry; Gate dielectric material; Insulating character;

机译：ZrO2;平板;集成电路（IC）工业;门电介质材料;绝缘特性;

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1. Studying the insulating characters of cubic ZrO_2 slabs with nine terminations within three lower index Miller planes (001), (110) and (111) [J] . Zhang Yan, Chen Hua-Xin, Duan Li, Microelectronic Engineering . 2019,第May期

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Studying the insulating characters of cubic ZrO_2 slabs with nine terminations within three lower index Miller planes (001), (110) and (111)

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