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首页> 外文期刊>Microelectronic Engineering >Studying the insulating characters of cubic ZrO_2 slabs with nine terminations within three lower index Miller planes (001), (110) and (111)
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Studying the insulating characters of cubic ZrO_2 slabs with nine terminations within three lower index Miller planes (001), (110) and (111)

机译：在三个下索引米勒（001）中，在三个下终端（001），（110）和（111）中，在九个终端中研究立方ZrO_2板的绝缘特征

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摘要

In this paper, we exam the insulating characters of cubic ZrO2 (c-ZrO2) slabs with various possible terminations within three lower index Miller planes (001), (110) and (111). It is found that, firstly, a shift towards higher energy region makes the valence bands of both the O-terminated slabs of (001) plane and OO-terminated slabs of (111) plane of c-ZrO2 cross the Fermi level (E-F) and thus unusable as a gate dielectric oxide. Second, a new splitting state presented just below the bottom of conduction band and crossed the E-F imply the Zr-terminated slabs of both (001) and (111) planes of c-ZrO2 are also unusable as a gate dielectric oxide. Thirdly, combining above two mechanisms together makes the insulating character disappear completely for Zr + O-terminated slabs of the (001) plane of c-ZrO2 and thus unusable as a gate dielectric oxide. Fourth, the insulating character is maintained for both the ZrO2-terminated slabs of the (110) plane and the O-terminated slabs of the (111) plane of c-ZrO2 and thus usable as a gate dielectric oxide. We hope these theoretical predictions can provide a guide in fabrication and application of ZrO2 gate dielectric material.
机译：在本文中，我们将立方ZrO2（C-ZrO2）板的绝缘特性进行了三个下指数米勒（001），（110）和（111）内的各种可能的终端。发现，首先，向更高能量区域的转变使得（001）平面的O封端板和（111）平面的O封端板的价带进行C-ZRO2的Fermi水平（EF）因此，不可用作栅极介电氧化物。其次，呈现在导通带的底部并交叉的新分裂状态呈E-F暗示Zr封端的C-ZrO2的（111）平面的Zr封端的板也不能形作为栅极介电氧化物。第三，将上述两个机构组合在一起使绝缘性能完全消失，对于C-ZrO2的（001）平面的Zr + O封端的板坯完全消失，因此不能使用作为栅极介电氧化物。第四，保持绝缘特性（110）平面的ZrO2封端板和C-ZrO2的（111）平面的O封端板，因此可用作栅极介电氧化物。我们希望这些理论预测可以提供ZrO2介电材料的制造和应用的指导。

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  • 来源
    《Microelectronic Engineering》 |2019年第5期|77-85|共9页
  • 作者

    Zhang Yan; Chen Hua-Xin; Duan Li; Fan Ji-Bin; Ni Lei; Wang Zhuo; Li Hao; Ji Vincent;

  • 作者单位

    Changan Univ Sch Mat Sci & Engn Xian 710061 Shaanxi Peoples R China;

    Changan Univ Sch Mat Sci & Engn Xian 710061 Shaanxi Peoples R China;

    Changan Univ Sch Mat Sci & Engn Xian 710061 Shaanxi Peoples R China;

    Changan Univ Sch Mat Sci & Engn Xian 710061 Shaanxi Peoples R China;

    Changan Univ Sch Mat Sci & Engn Xian 710061 Shaanxi Peoples R China;

    Changan Univ Sch Mat Sci & Engn Xian 710061 Shaanxi Peoples R China;

    Changan Univ Sch Mat Sci & Engn Xian 710061 Shaanxi Peoples R China;

    Univ Paris Sud ICMMO SP2M UMR CNRS 8182 F-91405 Orsay France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ZrO2; Slabs; Integrated-circuit (IC) industry; Gate dielectric material; Insulating character;

    机译：ZrO2;板坯;集成电路（IC）行业;栅极介电材料;绝缘性格;

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