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首页> 外文期刊>Microelectronic Engineering >Fabrication and characterization of SiO_2 microcantilevers by direct laser writing and wet chemical etching methods for relative humidity sensing
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Fabrication and characterization of SiO_2 microcantilevers by direct laser writing and wet chemical etching methods for relative humidity sensing

机译：SiO_2微悬臂梁的直接激光写入和湿法化学刻蚀方法用于相对湿度传感的制备和表征

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摘要

In the present work, SiO2 microcantilevers (MCs) of various lengths (50-330 mu m, width - 37 mu m, thickness - 0.98 mu m) were fabricated using Direct Laser Writing (DLW) and wet chemical etching methods. An effective method to avoid "stiction" while releasing these MCs by wet chemical etching of underlying Si is presented. It is shown that introducing a sharp convex tip at the free end of the MC along with post-etch rinsing in boiling DI water, substantially reduces the stiction. Successfully released MCs were characterized using a 3D optical microscope (3D OM) and Nano Vibration Analyzer (NVA), for initial bending and resonance frequency measurements, respectively. 3D OM measurements revealed that released MCs are bending upwards (i.e. away from the wafer) and the peak deflection (z(max)) value increases with increasing MC length (L). This is attributed to the presence of gradient residual stress (sigma(max)) in SiO2 film and from z(max) vs. L-2 plot sigma(max) was estimated to be 15.14 (+/- 0.32) MPa. The resonance frequency of the MCs was measured using NVA and found to be lower than the analytically estimated values, especially at smaller lengths. It is explained on the basis of the increase in the effective length of MCs due to undercutting. Finally, relative humidity (RH) sensitivity of the released MCs is demonstrated in dynamic mode, without any functionalization.
机译：在本工作中，使用直接激光写入（DLW）和湿法化学刻蚀方法制造了各种长度（50-330微米，宽度-37微米，厚度-0.98微米）的SiO2微悬臂梁（MC）。提出了一种有效的方法，该方法可以避免在通过湿法化学腐蚀下层Si释放这些MC时产生“粘连”。结果表明，在MC的自由端引入尖锐的凸形尖端，以及在沸腾的去离子水中进行蚀刻后冲洗，可以显着降低静摩擦。使用3D光学显微镜（3D OM）和纳米振动分析仪（NVA）对成功释放的MC进行表征，分别用于初始弯曲和共振频率测量。 3D OM测量表明，释放的MC向上弯曲（即远离晶片），并且峰值挠度（z（max））值随MC长度（L）的增加而增加。这归因于SiO2膜中存在梯度残余应力（sigma（max）），并且从z（max）与L-2图的关系中，sigma（max）估计为15.14（+/- 0.32）MPa。使用NVA测量MC的共振频率，发现其低于分析估计值，尤其是在较小的长度下。解释是由于根蚀导致MC的有效长度增加。最后，在没有任何功能的情况下以动态模式演示了释放的MC的相对湿度（RH）敏感性。

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