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首页> 外文期刊>Microelectronic Engineering >Fabrication of a high-resolution mask by using variable-shaped electron beam lithography with a non-chemically amplified resist and a post-exposure bake
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Fabrication of a high-resolution mask by using variable-shaped electron beam lithography with a non-chemically amplified resist and a post-exposure bake

机译：通过使用具有非化学放大抗蚀剂和曝光后烘烤的可变形状电子束光刻技术来制造高分辨率掩模

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摘要

A high-resolution technique was developed for fabrication of photomasks for 10-nm-technology nodes and beyond. Current mask manufacturing techniques use a chemically amplified resist (CAR) photoresist material that has a complex mechanism of acid generation that obscures the criteria for selecting the polymer, quencher, and crosslinker for industrial purposes. It is therefore important to validate non-CAR materials as alternative solutions for mask fabrication. In this research, diluted ZEP520A was used as a non-CAR material in conjunction with a JBX9000 electron-beam lithography (EBL) tool. Additionally, a post-exposure bake (PEB) is normally used in mask fabrication. The PEB method was also used in this research, and we investigated its temperature dependence. Critical dimensions (CDs) of 1:1 line-and-space, isolated space, and isolated line patterns on a diluted ZEP520A resist were measured and showed CD shrinkage, an extension effect, and retention of the integrity of the shape after the PEB process. A resolution of the order of 20 nm was attained and the insights gained from optimization of the PEB process might be usefully applied in advanced methods for fabricating masks of the next generation. (C) 2015 Elsevier B.V. All rights reserved.
机译：开发了一种高分辨率技术，用于制造10纳米技术节点及以后的光掩模。当前的掩模制造技术使用化学放大的抗蚀剂（CAR）光致抗蚀剂材料，该材料具有复杂的酸生成机理，从而掩盖了出于工业目的选择聚合物，淬灭剂和交联剂的标准。因此，重要的是要验证非CAR材料作为掩模制造的替代解决方案。在这项研究中，稀释的ZEP520A与JBX9000电子束光刻（EBL）工具一起用作非CAR材料。另外，通常在掩模制造中使用曝光后烘烤（PEB）。 PEB方法也用于本研究，我们研究了其温度依赖性。测量了稀释的ZEP520A抗蚀剂上1：1线间距，孤立空间和孤立线图案的临界尺寸（CD），并显示了PEB工艺后CD的收缩，延伸效应和形状完整性的保留。获得了大约20 nm的分辨率，并且从PEB工艺的优化中获得的见解可能会有用地应用于制造下一代掩模的先进方法中。 （C）2015 Elsevier B.V.保留所有权利。

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