Optical characterizations and reverse-bias electroluminescence observation for reliability investigations of the InGaN light emitting diode

著录项

• 来源
  《Microelectronic Engineering》 |2013年第1期|42-46|共5页
• 作者

  Hsiang Chen; Yih-Min Yeh; Chuan Hao Liao; Chun Wei Lin; Chuan-Haur Kao; Tien-Chang Lu;

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• 作者单位

  National Chi Nan University, No.1, University Road. Puli, Taiwan, ROC;

  Wu Feng University, Taiwan, ROC;

  National Chi Nan University, No.1, University Road. Puli, Taiwan, ROC;

  National Chi Nan University, No.1, University Road. Puli, Taiwan, ROC;

  Chang Gung University, KueiShan, Taiwan, ROC;

  National Chiao Tung University, Taiwan, ROC;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  optical characterization; GaN LED; electroluminescence; reverse bias; leakage current; hot electron;

  机译：光学表征GaN LED;电致发光反向偏置漏电流热电子;