Electronic structure of lanthanide oxide high K gate oxides

R. Gillen; J. Robertson

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Electronic structure of lanthanide oxide high K gate oxides

机译：镧系氧化物高K栅氧化物的电子结构

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Lanthanide (rare earth) oxides are used in gate stacks as high K gate oxides and for threshold voltage control. It is important that such oxides do not have states in the main band gap due to localized 4f states. We present hybrid density functional calculations of the oxides which give an electronic structure in agreement with previous empirical models and that show which metal oxides have gap states.

机译：镧系（稀土）氧化物在栅堆叠中用作高K栅氧化物并用于阈值电压控制。重要的是，由于局部4f态，此类氧化物在主带隙中不具有态。我们介绍了氧化物的混合密度泛函计算，这些计算给出了与以前的经验模型相符的电子结构，并表明了哪些金属氧化物具有间隙态。

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来源
《Microelectronic Engineering》 |2013年第9期|72-74|共3页
作者
R. Gillen; J. Robertson;
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作者单位

Engineering Department. University of Cambridge, Cambridge CB2 1PZ, UK;

Engineering Department. University of Cambridge, Cambridge CB2 1PZ, UK;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
High K oxide; Lanthanide; Rare earth; Band gap; Electronic structure;

机译：高钾氧化物;镧系元素;稀土;带隙电子结构;

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1. 4f Fine-Structure Levels as the Dominant Error in the Electronic Structures of Binary Lanthanide Oxides [J] . Huang Bolong Journal of Computational Chemistry: Organic, Inorganic, Physical, Biological . 2016,第9a10期

机译：4f精细结构能级是二元镧系氧化物电子结构中的主要误差
2. Electronic structures of SrMn_(1-x)Mo_xO_3 (0≤x≤0.75) perovskite oxides investigated by XAS and PES [J] . J. H. Hwang, D. H. Kim, S. M. Lee, Journal of Applied Physics . 2011,第7Pta3期

机译：XAS和PES研究SrMn_（1-x）Mo_xO_3（0≤x≤0.75）钙钛矿氧化物的电子结构
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4. Excellent electrical characteristics of lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and lanthanide-doped oxide for MOS gate dielectric applications [C] . Sanghun Jeon, Kiju Im, Hyundoek Yang Electron Devices Meeting, 2001. IEDM Technical Digest. International . 2001

机译：镧系氧化物（Pr，Nd，Sm，Gd和Dy）和掺杂镧系元素的氧化物具有出色的电学特性，可用于MOS栅极电介质
5. Electronic structure investigations of titanium oxide nanoclusters, boron-nitrogen heterocycles, and reaction products of lanthanides with oxygen difluoride and lanthanides with water. [D] . Mikulas, Tanya C. 2015

机译：电子结构研究氧化钛纳米团簇，硼氮杂环以及镧系元素与二氟化氧和镧系元素与水的反应产物。
6. Electronic Structure of a CuII-Alkoxide Complex Modeling Intermediates in Copper-Catalyzed Alcohol Oxidations [O] . Ellen C. Hayes, Thomas R. Porter, Charles J. Barrows, -1

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7. 4F fine-structure levels as the dominant error in the electronic structures of binary lanthanide oxides [O] . Huang, B 2016

机译：4F精细结构能级是二元镧系元素氧化物电子结构中的主要误差

Electronic structure of lanthanide oxide high K gate oxides

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