Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structure

Jakub Jasinski; Andrzej Mazurak; Bogdan Majkusiak

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Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structure

机译：研究通过绝缘子内部陷阱的隧道对MOS结构小信号导纳的影响

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摘要

The effect of tunneling through traps located inside the insulator layer on the small-signal admittance parameters of the MOS tunnel diode is investigated by means of the theoretical model. An influence of geometric and energy positions of the traps is studied. The model and considerations are confirmed by a comparison with measurement data of an experimental Al-SiO_2-Si structure.

机译：通过理论模型研究了通过位于绝缘体层内部的陷阱进行隧穿对MOS隧道二极管的小信号导纳参数的影响。研究了陷阱的几何和能量位置的影响。通过与实验Al-SiO_2-Si结构的测量数据进行比较，确定了模型和考虑因素。

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来源
《Microelectronic Engineering》 |2013年第9期|1-4|共4页
作者
Jakub Jasinski; Andrzej Mazurak; Bogdan Majkusiak;
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作者单位

Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, Warsaw, Poland;

Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, Warsaw, Poland;

Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, Warsaw, Poland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
Insulator traps; Tunneling; Admittance model; MOS tunnel diode;

机译：绝缘子陷阱;隧道准入模型MOS隧道二极管;

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专利

1. Small-signal admittance model of multi-traps distributed over energy and space in the insulator of MIS tunnel structures [J] . Jasinski Jakub, Mazurak Andrzej, Mroczynski Robert, Microelectronic Engineering . 2015,第NOVa1期

机译：MIS隧道结构绝缘子中能量和空间上分布的多阱小信号导纳模型
2. Small-signal admittance model as a characterization tool of the MOS tunnel diode [J] . Jasinski Jakub, Majkusiak Bogdan Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures . 2013,第1期

机译：小信号导纳模型作为MOS隧道二极管的表征工具
3. Two constant phase element behaviour of the admittance characteristics of GaAs metal-insulator-semiconductor structure with deep traps [J] . S. Kochowski, K. Nitsch, B. Paszkiewicz, Thin Solid Films . 2003,第1a2期

机译：具有深陷阱的GaAs金属-绝缘体-半导体结构的导纳特性的两个恒定相元素行为
4. Effect of Interface Traps Parameters on Admittance Characteristics of the MIS (Metal-Insulator-Semiconductor) Tunnel Structures [C] . Jakub Jasinski, Andrzej Mazurak, Bogdan Majkusiak Electron Technology Conference . 2016

机译：界面陷阱参数对MIS（金属-绝缘体-半导体）隧道结构导纳特性的影响
5. A STUDY OF INDIVIDUAL ELECTRON TRAPPING CENTERS AND 1/F NOISE IN METAL-INSULATOR-METAL TUNNEL JUNCTIONS. [D] . ROGERS, CHARLES THORNE, JR. 1987

机译：金属绝缘子金属隧道结中单个电子陷阱中心和1 / F噪声的研究。
6. Computational Study on the Structure Stability andElectronic Feature Analyses of Trapped Halocarbons inside a NovelBispyrazole Organic Molecular Cage [O] . Sarvesh Kumar Pandey, * 2021

机译：对结构稳定性和的计算研究小说中被困卤素的电子特征分析双吡唑有机分子笼
7. Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures [O] . Mitrovic, IZ, Weerakkody, AD, Sedghi, N, 2018

机译：金属-绝缘体-绝缘体-金属结构中共振隧穿的受控修正
8. Study of Gate Oxide Leakage and Charge Trapping in ZMR (Zone-Melting-Recrystallized) and SIMOX (Oxygen-Implanted) SOI (Silicon-On-Insulator) MOSFET's [R] . Lee, C. T., Burns, J. A. 1988

机译：ZmR（区域熔化 - 再结晶）和sImOX（氧注入）sOI（绝缘体上硅）mOsFET中的栅极氧化物泄漏和电荷俘获的研究

Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structure

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