Bias dependence of PBTI degradation mechanism in metal-Oxide-semiconductor field effect transistors with La-incorporated hafnium-based dielectric

Tae-Young Jang; Dong-Hyoub Kim; Jungwoo Kim; Jun Suk Chang; Jae Kyeong Jeong; Yoon-Uk Heo; Young-Ki Kim; Changhwan Choi; Hokyung Park; Rino Choi

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Bias dependence of PBTI degradation mechanism in metal-Oxide-semiconductor field effect transistors with La-incorporated hafnium-based dielectric

机译：掺有镧的ha基电介质的金属氧化物半导体场效应晶体管中PBTI降解机理的偏差依赖性

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摘要

Metal-Oxide-semiconductor field effect transistors (MOSFETs) with various concentrations of La incorporated in Hf-based dielectrics were characterized to evaluate the effect of La on devices' reliability. Compared with the small dependence of positive bias stress instability (PBTI) on stress bias in samples without La incorporation, significant dependence of PBTI degradation on stress bias was observed in the La-incorporated samples. HRTEM analysis and flat band voltage modulation data supported the interface dipole model, suggesting that this bias dependence of PBTI degradation in the La-incorporated samples could be explained by changes of electron tunneling mechanism due to interface dipoles.

机译：表征了掺入基于Hf的电介质中的各种浓度的La的金属氧化物半导体场效应晶体管（MOSFET），以评估La对器件可靠性的影响。与没有掺La的样品中正偏压应力不稳定性（PBTI）对应力偏压的依赖性较小相比，在掺La的样品中观察到PBTI降解对应力偏压的显着依赖性。 HRTEM分析和平带电压调制数据支持界面偶极子模型，这表明掺入La的样品中PBTI降解的这种偏倚性可以通过界面偶极子引起的电子隧穿机制的变化来解释。

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来源
《Microelectronic Engineering》 |2011年第7期|p.1373-1375|共3页
作者
Tae-Young Jang; Dong-Hyoub Kim; Jungwoo Kim; Jun Suk Chang; Jae Kyeong Jeong; Yoon-Uk Heo; Young-Ki Kim; Changhwan Choi; Hokyung Park; Rino Choi;
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作者单位

Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Republic of Korea;

Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Republic of Korea;

Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Republic of Korea;

Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Republic of Korea;

Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Republic of Korea;

Pohang University of Science and Technology, San 31, Hyoja dang, Pohang 790-784, Republic of Korea;

Ulsan National Institute of Science and Technology, 100 Banyeon-ri, Eonyang-eup, Ulsan 689-798, Republic of Korea;

Hanyang University, 17 Haengdang, Seongdong-Cu, Seoul 133-791, Republic of Korea;

SEMATECH, 257 Fuller Rd., Suite 2200, Albany, NY 12203, USA;

Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Republic of Korea;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
MOSFET; hafnium oxide; la incorporation; PBTI;

机译：MOSFET;氧化ha;La掺入;PBTI;

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3. Effect of Trap Profile on Device Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors with Hafnium-Based Dielectrics [J] . Tae-Young Jang, Tea Wan Kim, Dong-Hyoub Kim, Japanese journal of applied physics . 2010,第10期

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Bias dependence of PBTI degradation mechanism in metal-Oxide-semiconductor field effect transistors with La-incorporated hafnium-based dielectric

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